SEMICONDUCTOR DEVICE INCLUDING A MACRO PATTERN STRUCTURE FOR MONITORING OF LINE WIDTHS

    公开(公告)号:US20230253267A1

    公开(公告)日:2023-08-10

    申请号:US18149974

    申请日:2023-01-04

    CPC classification number: H01L22/12 H01L22/34

    Abstract: A semiconductor device may include a metal pattern in a device region of a substrate, and a macro pattern structure in a scribe lane region of the substrate. The macro pattern structure may include a plurality of types of macro patterns. Each type of macro pattern may include a color 1 pattern and a color 2 pattern adjacent to the color 1 pattern. The color 1 pattern and the color 2 pattern may include conductive lines extending in a first direction parallel to a surface of the substrate. The color 1 pattern and color 2 pattern may be alternately arranged in a second direction perpendicular to the first direction and parallel to the surface of the substrate.

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