公开(公告)号：US20200152462A1

公开(公告)日：2020-05-14

申请号：US16530286

申请日：2019-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Min Park ,  Se Myeong Jang ,  Bong Soo Kim ,  Je Min Park

IPC: H01L21/033 ,  H01L21/762 ,  H01L21/308 ,  H01L21/3213

Abstract: A method of forming a semiconductor device includes forming first sacrificial patterns on a lower structure, forming first remaining mask layers having a “U” shape between the first sacrificial patterns to be in contact with the first sacrificial patterns, forming first remaining mask patterns by pattering the first remaining mask layers, each of the first remaining mask patterns including a horizontal portion, parallel to an upper surface of the lower structure, and a vertical portion, perpendicular to the upper surface of the lower structure, forming second mask patterns spaced apart from the vertical portions of the first remaining mask patterns, removing the first sacrificial patterns remaining after forming the second mask patterns, and forming first mask patterns by etching the horizontal portions of the first remaining mask patterns.

公开(公告)号：US11355349B2

公开(公告)日：2022-06-07

申请号：US17032356

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Min Park ,  Se Myeong Jang ,  Bong Soo Kim ,  Je Min Park

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/762

Abstract: A method includes forming hard mask patterns by depositing a support mask layer, a polycrystalline silicon layer, and a hard mask layer on a substrate and etching the hard mask layer, forming pre-polycrystalline silicon patterns by etching the polycrystalline silicon layer using the hard mask patterns as an etch mask, oxidizing side surfaces of the pre-polycrystalline silicon patterns to form polycrystalline silicon patterns and a silicon oxide layer, forming spacer patterns covering sides of the silicon oxide layer, forming a sacrificial layer on a top surface of the support mask layer to cover the silicon oxide layer and the spacer patterns, etching the sacrificial layer and the silicon oxide layer, forming support mask patterns by etching the support mask layer using the polycrystalline silicon patterns and the spacer patterns as an etch mask, and forming activation pins by etching the substrate using the support mask patterns as an etch mask.

公开(公告)号：US11676816B2

公开(公告)日：2023-06-13

申请号：US16530286

申请日：2019-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Min Park ,  Se Myeong Jang ,  Bong Soo Kim ,  Je Min Park

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/308 ,  H01L21/762

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/32139 ,  H01L21/76224

Abstract: A method of forming a semiconductor device includes forming first sacrificial patterns on a lower structure, forming first remaining mask layers having a “U” shape between the first sacrificial patterns to be in contact with the first sacrificial patterns, forming first remaining mask patterns by pattering the first remaining mask layers, each of the first remaining mask patterns including a horizontal portion, parallel to an upper surface of the lower structure, and a vertical portion, perpendicular to the upper surface of the lower structure, forming second mask patterns spaced apart from the vertical portions of the first remaining mask patterns, removing the first sacrificial patterns remaining after forming the second mask patterns, and forming first mask patterns by etching the horizontal portions of the first remaining mask patterns.