公开(公告)号：US11605567B2

公开(公告)日：2023-03-14

申请号：US17212914

申请日：2021-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jitae Park ,  Youngjoo Lee ,  Taekyun Kang ,  Doo Young Gwak ,  Aekyung Kim ,  Hyowon Bae ,  Kyunggon You ,  Seongjin In ,  Sang Yoon Han

IPC: H01L21/66 ,  H01J37/32

Abstract: Disclosed are a method of monitoring a semiconductor device fabrication process and a method of fabricating a semiconductor device using the same. The monitoring method may include determining a normalization range of a target byproduct, which is a measurement target of byproducts produced in a chamber by an etching process, the byproducts including the target byproduct and a non-target byproduct, the target byproduct including first and second target byproducts, which are respectively produced by and before the etching process on a to-be-processed layer, obtaining a first index from a ratio of the target byproduct to the non-target byproduct, obtaining a second index by subtracting an emission intensity of the second target byproduct from the first index, obtaining a third index by integrating the second index on a time interval, and estimating a result of the etching process and presence or absence of a failure, based on the third index.

公开(公告)号：US20250087509A1

公开(公告)日：2025-03-13

申请号：US18647044

申请日：2024-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jitae Park ,  Kwangho Lee ,  Seongjin In ,  Keonhee Lim ,  Yoonjae Kim ,  Ilwoo Kim ,  Sangki Nam ,  Sejin Oh

IPC: H01L21/67 ,  G01J3/443 ,  G05B19/4099 ,  H01J37/32

Abstract: A semiconductor process device includes a housing including a chamber where a substrate is processed, a viewport in a side wall of the housing, an adapter configured to receive reflected light in which light generated from plasma generated inside the chamber is reflected at a target position on a surface of a structure provided on an upper surface of the substrate, a polarization beam splitter configured to separate the reflected light received from the adapter into P-polarized light and S-polarized light, a spectroscope configured to analyze spectra of the P-polarized light and the S-polarized light, and a control unit configured to monitor a thickness of the structure based on luminous intensity over time at one or more wavelengths of each of the P-polarized light and the S-polarized light, based on results of analyzing the spectra.