公开(公告)号：US11037806B2

公开(公告)日：2021-06-15

申请号：US16509815

申请日：2019-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Yoon Song ,  Chan-Hoon Park ,  Jong-Woo Sun ,  Jung-Mo Sung ,  Je-Woo Han ,  Jin-Young Park

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/762 ,  H01L21/308 ,  H01L21/3065

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

公开(公告)号：US20200227289A1

公开(公告)日：2020-07-16

申请号：US16509815

申请日：2019-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Yoon Song ,  Chan-Hoon Park ,  Jong-Woo Sun ,  Jung-Mo Sung ,  Je-Woo Han ,  Jin-Young Park

IPC: H01L21/67 ,  H01J37/32

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

公开(公告)号：US11521866B2

公开(公告)日：2022-12-06

申请号：US17198938

申请日：2021-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Yoon Song ,  Chan-Hoon Park ,  Jong-Woo Sun ,  Jung-Mo Sung ,  Je-Woo Han ,  Jin-Young Park

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/762 ,  H01L21/308 ,  H01L21/3065

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.