公开(公告)号：US10825666B2

公开(公告)日：2020-11-03

申请号：US16395532

申请日：2019-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyeong-Hun Kim ,  Jeong-Il Mun ,  Hyung-Joo Lee ,  Jong-Woo Sun ,  Dong-Kyu Kim

IPC: H01J37/32 ,  G01J3/02 ,  G01J3/443 ,  G01N21/68 ,  G01N21/73

Abstract: Provided is a plasma monitoring apparatus including an objective lens configured to collect light that is emitted from plasma and passes through an optical window of a chamber, a beam splitter configured to divide the light collected by the objective lens into first light and second light, a first optical system and a second optical system that are provided on a first optical path of the first light and a second optical path of the second light, respectively, the first optical system and the second optical system having different focal lengths such that focal points of the first optical system and the second optical system are set at different regions in the plasma, and a light detector configured to detect the first light that has passed through the first optical system and the second light that has passed through the second optical system.

公开(公告)号：US20200227289A1

公开(公告)日：2020-07-16

申请号：US16509815

申请日：2019-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Yoon Song ,  Chan-Hoon Park ,  Jong-Woo Sun ,  Jung-Mo Sung ,  Je-Woo Han ,  Jin-Young Park

IPC: H01L21/67 ,  H01J37/32

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

公开(公告)号：US20170301578A1

公开(公告)日：2017-10-19

申请号：US15396929

申请日：2017-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Pyo HONG ,  Sang-Dong Kwon ,  Kwang-Nam Kim ,  Jong-Woo Sun ,  Sang-Rok Oh

IPC: H01L21/687 ,  H01J37/32 ,  B08B9/08 ,  B08B7/00 ,  H01L21/67

CPC classification number: H01L21/68721 ,  B08B7/00 ,  B08B9/08 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32733 ,  H01J37/32853 ,  H01J37/32862 ,  H01J37/3288 ,  H01J2237/002 ,  H01J2237/334 ,  H01L21/67069

Abstract: A method of processing a substrate including loading the substrate into a plasma-processing apparatus. The plasma-processing apparatus includes a focus ring. The substrate is processed in the plasma-processing apparatus using plasma. The substrate is unloaded from the plasma-processing apparatus. A layer is formed on the focus ring. The layer is formed by an in-situ process in the plasma-processing apparatus.

公开(公告)号：US11521866B2

公开(公告)日：2022-12-06

申请号：US17198938

申请日：2021-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Yoon Song ,  Chan-Hoon Park ,  Jong-Woo Sun ,  Jung-Mo Sung ,  Je-Woo Han ,  Jin-Young Park

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/762 ,  H01L21/308 ,  H01L21/3065

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

公开(公告)号：US11521836B2

公开(公告)日：2022-12-06

申请号：US16407508

申请日：2019-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Woo Lee ,  Kyo-Hyeok Kim ,  Hyo-Sung Kim ,  Jong-Woo Sun ,  Seung-Bo Shim ,  Kyung-Hoon Lee ,  Jae-Hyun Lee ,  Ji-Soo Im ,  Min-Young Hur

IPC: H01J37/32 ,  H01J37/21

Abstract: A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

公开(公告)号：US11437222B2

公开(公告)日：2022-09-06

申请号：US17003479

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Pyo Hong ,  Jong-Woo Sun ,  Jung-Mo Sung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A plasma processing apparatus includes a process chamber having an inner space, an electrostatic chuck in the process chamber and to which a substrate is mounted, a gas injection unit to inject a process gas into the process chamber at a side of the process chamber, a plasma applying unit to transform the process gas injected into the process chamber into plasma, and a plasma adjusting unit disposed around the electrostatic chuck and operative to adjust the density of the plasma across the substrate.

公开(公告)号：US10971382B2

公开(公告)日：2021-04-06

申请号：US16245339

申请日：2019-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Nam Kim ,  Byeong-Hee Kim ,  Jeongryul Kim ,  Hae-Joong Park ,  Jong-Woo Sun ,  Sang-Rok Oh ,  Sung-Wook Jung ,  Nam-Young Cho ,  Jung-Pyo Hong

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673

Abstract: A semiconductor manufacturing apparatus includes a loadlock module including a loadlock chamber in which a substrate container is received, wherein the loadlock module is configured to switch an internal pressure of the loadlock chamber between atmospheric pressure and a vacuum; and a transfer module configured to transfer a substrate between the substrate container received in the loadlock chamber and a process module for performing a semiconductor manufacturing process on the substrate, wherein the loadlock module includes a purge gas supply unit configured to supply a purge gas into the substrate container through a gas supply line connected to the substrate container; and an exhaust unit configured to discharge a gas in the substrate container through an exhaust line connected to the substrate container.

公开(公告)号：US20200227240A1

公开(公告)日：2020-07-16

申请号：US16535801

申请日：2019-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG-HYEON NA ,  Seung-Bo Shim ,  Ha-Dong Jin ,  Min-Young Hur ,  Kyo-Hyeok Kim ,  Jong-Woo Sun ,  Jae-Hyun Lee

IPC: H01J37/32 ,  H03H7/38

Abstract: According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

公开(公告)号：US11282678B2

公开(公告)日：2022-03-22

申请号：US16535801

申请日：2019-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hyeon Na ,  Seung-Bo Shim ,  Ha-Dong Jin ,  Min-Young Hur ,  Kyo-Hyeok Kim ,  Jong-Woo Sun ,  Jae-Hyun Lee

IPC: H01J37/32 ,  H03H7/38

Abstract: According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

公开(公告)号：US11037766B2

公开(公告)日：2021-06-15

申请号：US16268790

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Nam Kim ,  Sung-Yeon Kim ,  Hyung-Jun Kim ,  Jong-Woo Sun ,  Sang-Rok Oh ,  Jung-Pyo Hong

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: A substrate support apparatus includes a substrate stage to support a substrate, and a ground ring assembly along a circumference of the substrate stage, the ground ring assembly including a ground ring body, the ground ring body having a plurality of recesses along a circumferential portion thereof, and a plurality of ground blocks movable to be received into respective recesses of the plurality of recesses, the plurality of ground blocks including a conductive material to be electrically grounded.