公开(公告)号：US12272630B2

公开(公告)日：2025-04-08

申请号：US18347519

申请日：2023-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ungcheon Kim ,  Sungwoo Park ,  Yukyung Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L25/18

Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

公开(公告)号：US11195785B2

公开(公告)日：2021-12-07

申请号：US16891443

申请日：2020-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Seungkwan Ryu ,  Yunseok Choi

IPC: H01L23/12 ,  H01L23/14 ,  H01L23/48 ,  H01L21/00 ,  H01L21/44 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L21/768 ,  H01L21/48 ,  H01L23/532

Abstract: An interposer includes a base layer having a first surface and a second surface, a redistribution structure on the first surface, an interposer protection layer on the second surface, a pad wiring layer on the interposer protection layer, an interposer through electrode passing through the base layer and the interposer protection layer and electrically connecting the redistribution structure to the pad wiring layer, an interposer connection terminal attached to the pad wiring layer, and a wiring protection layer including a first portion covering a portion of the interposer protection layer adjacent to the pad wiring layer, a second portion covering a portion of a top surface of the pad wiring layer, and a third portion covering a side surface of the pad wiring layer. The third portion is disposed between the first portion and the second portion. The first to third portions have thicknesses different from each other.

公开(公告)号：US20210167001A1

公开(公告)日：2021-06-03

申请号：US16891443

申请日：2020-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Seungkwan Ryu ,  Yunseok Choi

IPC: H01L23/498 ,  H01L23/538 ,  H01L23/31

Abstract: An interposer includes a base layer having a first surface and a second surface, a redistribution structure on the first surface, an interposer protection layer on the second surface, a pad wiring layer on the interposer protection layer, an interposer through electrode passing through the base layer and the interposer protection layer and electrically connecting the redistribution structure to the pad wiring layer, an interposer connection terminal attached to the pad wiring layer, and a wiring protection layer including a first portion covering a portion of the interposer protection layer adjacent to the pad wiring layer, a second portion covering a portion of a top surface of the pad wiring layer, and a third portion covering a side surface of the pad wiring layer. The third portion is disposed between the first portion and the second portion. The first to third portions have thicknesses different from each other.

公开(公告)号：US11728255B2

公开(公告)日：2023-08-15

申请号：US17154067

申请日：2021-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ungcheon Kim ,  Sungwoo Park ,  Yukyung Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L25/18

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/49816 ,  H01L23/49838 ,  H01L25/18

Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

公开(公告)号：US11482483B2

公开(公告)日：2022-10-25

申请号：US17038306

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L21/48 ,  H01L23/544

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

公开(公告)号：US12218043B2

公开(公告)日：2025-02-04

申请号：US17971321

申请日：2022-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L25/18 ,  H01L23/544

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

公开(公告)号：US11587859B2

公开(公告)日：2023-02-21

申请号：US17511879

申请日：2021-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Seungkwan Ryu ,  Yunseok Choi

IPC: H01L23/12 ,  H01L23/14 ,  H01L23/48 ,  H01L21/00 ,  H01L21/44 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L21/768 ,  H01L21/48 ,  H01L23/532

Abstract: An interposer includes a base layer having a first surface and a second surface, a redistribution structure on the first surface, an interposer protection layer on the second surface, a pad wiring layer on the interposer protection layer, an interposer through electrode passing through the base layer and the interposer protection layer and electrically connecting the redistribution structure to the pad wiring layer, an interposer connection terminal attached to the pad wiring layer, and a wiring protection layer including a first portion covering a portion of the interposer protection layer adjacent to the pad wiring layer, a second portion covering a portion of a top surface of the pad wiring layer, and a third portion covering a side surface of the pad wiring layer. The third portion is disposed between the first portion and the second portion. The first to third portions have thicknesses different from each other.

公开(公告)号：US20250132238A1

公开(公告)日：2025-04-24

申请号：US18991938

申请日：2024-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yukyung Park ,  Ungcheon Kim ,  Sungwoo Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L23/544 ,  H01L25/18

Abstract: Provided is an interposer for a semiconductor package, the interposer including an interposer substrate comprising a first main surface and a second main surface opposite to the first main surface, a first through-electrode structure and a second through-electrode structure each passing through the interposer substrate and protruding from the first main surface, a connection terminal structure contacting both the first through-electrode structure and the second through-electrode structure, and a photosensitive polymer layer arranged between the connection terminal structure and the interposer substrate, and between the first through-electrode structure and the second through-electrode structure.

公开(公告)号：US12021032B2

公开(公告)日：2024-06-25

申请号：US18326325

申请日：2023-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yanggyoo Jung ,  Jinhyun Kang ,  Sungeun Kim ,  Sangmin Yong ,  Seungkwan Ryu

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/5383 ,  H01L23/49816 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0655 ,  H01L24/32 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/1517

Abstract: A semiconductor package includes a package substrate. An interposer is disposed on the package substrate. The interposer includes a semiconductor substrate, a wiring layer disposed on an upper surface of the semiconductor substrate and having a plurality of wirings therein, redistribution wiring pads disposed on the wiring layer and electrically connected to the wirings, bonding pads disposed on the redistribution wiring pads, and an insulation layer pattern disposed on the wiring layer and exposing at least a portion of the bonding pad, and first and second semiconductor devices disposed on the interposer. The first and second semiconductor devices are spaced apart from each other and are electrically connected to each other by at least one of the wirings.

公开(公告)号：US20230352386A1

公开(公告)日：2023-11-02

申请号：US18347519

申请日：2023-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ungcheon Kim ,  Sungwoo Park ,  Yukyung Park ,  Seungkwan Ryu

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49822 ,  H01L23/49838 ,  H01L21/4857 ,  H01L23/49816 ,  H01L25/18

Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.