公开(公告)号：US09709893B2

公开(公告)日：2017-07-18

申请号：US14990818

申请日：2016-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sook Hyun Lee ,  Shuichi Tamamushi ,  So-Eun Shin ,  Inkyun Shin ,  Jin Choi

IPC: B44C1/22 ,  G03F7/32 ,  G03F1/36 ,  G03F1/78

CPC classification number: G03F7/32 ,  G03F1/36 ,  G03F1/78

Abstract: An exposure method includes designing a target pattern to be formed on a substrate, producing a first dose map having first dose values of beams of energy, e.g., electron beams, creating from the first dose map a second dose map having second dose values different from the first dose values, and irradiating regions of a layer of photoresist on the substrate with overlapping beams to expose the regions to doses of energy having values based on the second dose values. The photoresist layer may then be developed and used an etch mask. The etch mask may be used to etch a mask layer on a transparent substrate to form a reticle.

公开(公告)号：US20140302428A1

公开(公告)日：2014-10-09

申请号：US14095090

申请日：2013-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： So-Eun Shin ,  Byunggook Kim ,  Jihyeon Choi

IPC: G03F1/80

CPC classification number: G03F1/80

Abstract: A photo-mask for fabricating a semiconductor device may include a transparent substrate including a main region, a supplementary region adjacent to the main region, a main pattern for developing circuits in a semiconductor device provided on the main region of the transparent substrate, and a supplementary pattern for optical proximity correction provided on the supplementary region of the transparent substrate. The main pattern has a sidewall perpendicular to a surface of the transparent substrate, and the supplementary pattern has a sidewall inclined to the surface of the transparent substrate and an upward tapered structure.

Abstract translation: 用于制造半导体器件的光掩模可以包括：透明基板，包括主区域，与主区域相邻的补充区域，设置在透明基板的主区域上的半导体器件中的显影电路的主图案，以及 在透明基板的辅助区域上设置用于光学邻近校正的补充图案。 主图案具有垂直于透明基板的表面的侧壁，辅助图案具有朝向透明基板的表面倾斜的侧壁和向上的锥形结构。