公开(公告)号：US20240045342A1

公开(公告)日：2024-02-08

申请号：US18302375

申请日：2023-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su Bin KONG ,  Sang-Ho YUN ,  Woo Jin JUNG

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/0392 ,  G03F7/0025 ,  G03F7/2002 ,  G03F7/70466

Abstract: A method for inspecting a critical dimension may include providing a substrate, applying a photoresist on the substrate, variably irradiating a dose of light onto the photoresist, performing a photo process to develop the photoresist to form a photoresist pattern, performing an etching process using the photoresist pattern as an etching mask to form a plurality of patterns, measuring a width of each of the plurality of patterns and a spacing between adjacent ones of the plurality of patterns, and identifying a cause of a defect in the photo process based on the measured width and the measured spacing.