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Patent Agency Ranking
公开(公告)号：US20170054075A1
公开(公告)日：2017-02-23
申请号：US15344772
申请日：2016-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hideki Horii , Jeonghee Park , Sugwoo Jung
CPC classification number: H01L45/1608 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/141
Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a selection element, a lower electrode pattern provided on the selection element to include a horizontal portion and a vertical portion; and a phase-changeable pattern on the lower electrode pattern. The vertical portion may extend from the horizontal portion toward the phase-changeable pattern and have a top surface, whose area is smaller than that of a bottom surface of the phase-changeable pattern.
Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括选择元件，设置在选择元件上以包括水平部分和垂直部分的下电极图案; 和在下电极图案上的相变图案。 垂直部分可以从水平部分向相变图案延伸，并且具有面积小于可相变图案底面的面积。
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公开(公告)号：US20160056376A1
公开(公告)日：2016-02-25
申请号：US14746039
申请日：2015-06-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hideki Horii , Jeonghee Park , Sugwoo Jung
CPC classification number: H01L45/1608 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/141
Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a selection element, a lower electrode pattern provided on the selection element to include a horizontal portion and a vertical portion; and a phase-changeable pattern on the lower electrode pattern. The vertical portion may extend from the horizontal portion toward the phase-changeable pattern and have a top surface, whose area is smaller than that of a bottom surface of the phase-changeable pattern.
Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括选择元件，设置在选择元件上以包括水平部分和垂直部分的下电极图案; 和在下电极图案上的相变图案。 垂直部分可以从水平部分向相变图案延伸，并且具有面积小于可相变图案底面的面积。
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公开(公告)号：US09893271B2
公开(公告)日：2018-02-13
申请号：US15210151
申请日：2016-07-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junghwan Park , Jonguk Kim , Soonoh Park , Jung Moo Lee , Sugwoo Jung
CPC classification number: H01L43/02 , H01L27/228 , H01L43/08 , H01L43/12
Abstract: A semiconductor memory device includes a selection transistor on a semiconductor substrate, a lower contact plug connected to a drain region of the selection transistor, and a magnetic tunnel junction pattern on the lower contact plug, the magnetic tunnel junction pattern including a bottom electrode in contact with the lower contact plug, the bottom electrode being an amorphous tantalum nitride layer, a top electrode on the bottom electrode, first and second magnetic layers between the top and bottom electrodes, and a tunnel barrier layer between the first and second magnetic layers.
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公开(公告)号：US09893281B2
公开(公告)日：2018-02-13
申请号：US15344772
申请日：2016-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hideki Horii , Jeonghee Park , Sugwoo Jung
CPC classification number: H01L45/1608 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/141
Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a selection element, a lower electrode pattern provided on the selection element to include a horizontal portion and a vertical portion; and a phase-changeable pattern on the lower electrode pattern. The vertical portion may extend from the horizontal portion toward the phase-changeable pattern and have a top surface, whose area is smaller than that of a bottom surface of the phase-changeable pattern.
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公开(公告)号：US09520556B2
公开(公告)日：2016-12-13
申请号：US14746039
申请日：2015-06-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hideki Horii , Jeonghee Park , Sugwoo Jung
CPC classification number: H01L45/1608 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/141
Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a selection element, a lower electrode pattern provided on the selection element to include a horizontal portion and a vertical portion; and a phase-changeable pattern on the lower electrode pattern. The vertical portion may extend from the horizontal portion toward the phase-changeable pattern and have a top surface, whose area is smaller than that of a bottom surface of the phase-changeable pattern.
Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括选择元件，设置在选择元件上以包括水平部分和垂直部分的下电极图案; 和在下电极图案上的相变图案。 垂直部分可以从水平部分向相变图案延伸，并且具有面积小于可相变图案底面的面积。
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