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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200343243A1

    公开(公告)日：2020-10-29

    申请号：US16926360

    申请日：2020-07-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Min KIM ,  Dong Won KIM

    IPC: H01L27/088 ,  H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/768

    Abstract: A semiconductor device is provided, which includes a first and second multichannel active patterns spaced apart from one another and extending in a first direction. The semiconductor device also includes first and second gate structures on the first and second multichannel active patterns, extending in a second direction and including first and second gate insulating films, respectively. Sidewalls of the first multichannel active pattern include first portions in contact with the first gate insulating film, second portions not in contact with the first gate insulating film, third portions in contact with the second gate insulating film, and fourth portions not in contact with the second gate insulating film. Additionally, a height of the first portions of the first multichannel active pattern is greater than a height of the third portions of the first multichannel active pattern.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20210398948A1

    公开(公告)日：2021-12-23

    申请号：US17463650

    申请日：2021-09-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Min KIM ,  Dae Won HA

    IPC: H01L25/065 ,  H01L23/00 ,  H01L23/48 ,  H01L21/768 ,  H01L25/00

    Abstract: A device includes a lower semiconductor substrate, a lower gate structure on the lower semiconductor substrate, the lower gate structure comprises a lower gate electrode, a lower interlayer insulating film on the lower semiconductor substrate, an upper semiconductor substrate on the lower interlayer insulating film, an upper gate structure on the upper semiconductor substrate, and an upper interlayer insulating film on the lower interlayer insulating film, the upper interlayer insulating film covers sidewalls of the upper semiconductor substrate The upper gate structure comprises an upper gate electrode extending in a first direction and gate spacers along sidewalls of the upper gate electrode. The upper gate electrode comprises long sidewalls extending in the first direction and short sidewalls in a second direction The gate spacers are on the long sidewalls of the upper gate electrode and are not disposed on the short sidewalls of the upper gate electrode.

    SEMICONDUCTOR DEVICE INCLUDING A MULTIGATE TRANSISTOR FORMED WITH FIN STRUCTURE
    5.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING A MULTIGATE TRANSISTOR FORMED WITH FIN STRUCTURE 审中-公开

    公开(公告)号：US20200013777A1

    公开(公告)日：2020-01-09

    申请号：US16574887

    申请日：2019-09-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Min KIM ,  Dong Won KIM ,  Geum Jong BAE

    IPC: H01L27/088 ,  H01L27/02 ,  H01L21/8234

    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a plurality of fins comprising a first fin, a second fin, a third fin, a fourth fin and a fifth fin, each of the plurality of protruding from the substrate in a first direction, and spaced apart from one another in a second direction that intersects the first direction and a plurality of trenches comprising a first trench, a second trench, a third trench and a fourth trench, each of the plurality of trenches being formed between adjacent fins of the plurality of fins, wherein variation of a first width of the first trench and a third width of the third trench is smaller than a first variation, wherein variation of a second width of the second trench and a fourth width of the fourth trench is smaller than a second variation, and wherein the second variation is greater than the first variation.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240371999A1

    公开(公告)日：2024-11-07

    申请号：US18770511

    申请日：2024-07-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Min KIM

    IPC: H01L29/78 ,  H01L23/528 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417

    Abstract: A semiconductor device includes a base substrate, a first electrode plate on the base substrate, a first power rail on the first electrode plate, the first power rail extending in a first horizontal direction and overlapping the first electrode plate in a vertical direction, a second power rail on the first electrode plate, the second power rail extending in the first horizontal direction and overlapping the first electrode plate in the vertical direction, and the second power rail being spaced apart from the first power rail in a second horizontal direction different from the first horizontal direction, a first power rail contact electrically connecting the first electrode plate and the first power rail, an insulating layer on the base substrate to surround the first electrode plate, the first power rail, and the second power rail, and a gate electrode extending in the second horizontal direction on the insulating layer.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220320329A1

    公开(公告)日：2022-10-06

    申请号：US17517941

    申请日：2021-11-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Min KIM

    IPC: H01L29/78 ,  H01L27/088 ,  H01L29/417 ,  H01L29/06 ,  H01L23/528

    Abstract: A semiconductor device includes a base substrate, a first electrode plate on the base substrate, a first power rail on the first electrode plate, the first power rail extending in a first horizontal direction and overlapping the first electrode plate in a vertical direction, a second power rail on the first electrode plate, the second power rail extending in the first horizontal direction and overlapping the first electrode plate in the vertical direction, and the second power rail being spaced apart from the first power rail in a second horizontal direction different from the first horizontal direction, a first power rail contact electrically connecting the first electrode plate and the first power rail, an insulating layer on the base substrate to surround the first electrode plate, the first power rail, and the second power rail, and a gate electrode extending in the second horizontal direction on the insulating layer.

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权

    公开(公告)号：US20220037319A1

    公开(公告)日：2022-02-03

    申请号：US17210751

    申请日：2021-03-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Mun Hyeon KIM ,  Sung Min KIM ,  Dae Won HA

    IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

    Abstract: A semiconductor device includes a substrate with first and second regions separated from each other, a laminate structure including at least one sacrificial layer and at least one active layer alternately stacked on the substrate, a first isolation insulating layer on the laminate structure on the first region, a second isolation insulating layer on the laminate structure on the second region, the second isolation insulating layer having a same thickness as the first isolation insulating layer, a first upper active pattern spaced apart from the first isolation insulating layer, a first gate electrode surrounding at least a portion of the first upper active pattern, a second upper active pattern spaced apart from the second isolation insulating layer, and a second gate electrode surrounding at least a portion of the second upper active pattern, wherein top surfaces of the first and second isolation insulating layers are at different heights.

    SEMICONDUCTOR DEVICE INCLUDING A MULTIGATE TRANSISTOR FORMED WITH FIN STRUCTURE
    9.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING A MULTIGATE TRANSISTOR FORMED WITH FIN STRUCTURE 审中-公开

    公开(公告)号：US20180342508A1

    公开(公告)日：2018-11-29

    申请号：US15709023

    申请日：2017-09-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Min KIM ,  Dong Won KIM ,  Geum Jong BAE

    IPC: H01L27/088 ,  H01L27/02 ,  H01L21/8234

    CPC classification number: H01L27/0886 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/823431 ,  H01L27/0207 ,  H01L29/6656

    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a plurality of fins comprising a first fin, a second fin, a third fin, a fourth fin and a fifth fin, each of the plurality of protruding from the substrate in a first direction, and spaced apart from one another in a second direction that intersects the first direction and a plurality of trenches comprising a first trench, a second trench, a third trench and a fourth trench, each of the plurality of trenches being formed between adjacent fins of the plurality of fins, wherein variation of a first width of the first trench and a third width of the third trench is smaller than a first variation, wherein variation of a second width of the second trench and a fourth width of the fourth trench is smaller than a second variation, and wherein the second variation is greater than the first variation.

    DISPLAY APPARATUS
    10.
    发明申请
    DISPLAY APPARATUS 审中-公开
    显示设备

    公开(公告)号：US20170059931A1

    公开(公告)日：2017-03-02

    申请号：US14962593

    申请日：2015-12-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Min KIM ,  Jeong Dong NOH ,  Jung Woo HONG ,  Jung Hyun PARK ,  Duk Jin JEON

    IPC: G02F1/1335

    CPC classification number: G02F1/133528 ,  G02F1/133512 ,  G02F1/133605 ,  G02F1/133606 ,  G02F1/13452 ,  G02F2001/133388 ,  G02F2001/133531

    Abstract: A display apparatus including: a main body having an opening at the front part; a backlight unit configured to generate light; and an image forming unit provided in the front part of the main body, and configured to block or transmit the light generated by the backlight unit to create an image, where the image forming unit includes: a pair of transparent substrates disposed to be opposite to each other; a cable configured to transmit image data to the pair of transparent substrates; and a pair of polarizing films respectively disposed on the outer surfaces of the pair of transparent substrates, and wherein an edge part of at least one transparent substrate of the pair of transparent substrates protrudes to connect to the cable, and at least one polarizing film of the pair of polarizing films extends to the main body in a direction in which the at least one transparent substrate protrudes.

    Abstract translation: 一种显示装置，包括：主体，其在前部具有开口; 配置为产生光的背光单元; 以及图像形成单元，其设置在所述主体的前部，并且被配置为阻挡或透射由所述背光单元产生的光以产生图像，其中所述图像形成单元包括：一对透明基板，设置成与 彼此; 配置为将图像数据传送到所述一对透明基板的电缆; 以及一对偏振膜，其分别设置在所述一对透明基板的外表面上，并且所述一对透明基板中的至少一个透明基板的边缘部分突出以连接到所述电缆，并且至少一个偏振膜 所述一对偏光膜沿着至少一个透明基板突出的方向延伸到主体。

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