公开(公告)号：US20250006770A1

公开(公告)日：2025-01-02

申请号：US18735325

申请日：2024-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihun Lim ,  Jinyoung Kim ,  Myunghae Seo ,  Sungki Min ,  Chang Kyu Lee

IPC: H01L27/146

Abstract: A dual vertical transfer gate, a transistor including the same, and a CMOS image sensing device including the same. In some embodiments, a gate of the dual vertical transfer transistor may include a pair of poles, which are extended to an n-type region of a photodiode, and a connecting portion, which connects the paired poles to each other. A first insulating pattern may be provided between the poles and on the substrate.

公开(公告)号：US11183526B2

公开(公告)日：2021-11-23

申请号：US16701750

申请日：2019-12-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Ho Ro ,  Doowon Kwon ,  Seokjin Kwon ,  Jameyung Kim ,  Jinyoung Kim ,  Sungki Min ,  Kwansik Cho ,  Mangeun Cho ,  Ho-Chul Ji

IPC: H01L21/00 ,  H01L27/146

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.