公开(公告)号：US20190386008A1

公开(公告)日：2019-12-19

申请号：US16270865

申请日：2019-02-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoi Sung Chung ,  Tae Sung Kang ,  Dong Suk Shin ,  Kong Soo Lee ,  Jun-Won Lee

IPC: H01L27/108 ,  H01L29/66 ,  H01L21/265 ,  H01L21/02 ,  H01L21/768 ,  H01L29/51 ,  H01L21/311 ,  H01L21/324 ,  H01L29/08 ,  H01L29/40 ,  H01L21/266

Abstract: Methods of fabricating a semiconductor device are provided. The methods may include forming a gate structure on a core-peri region of a substrate. The substrate may further include a cell region. The methods may also include forming a gate spacer on a sidewall of the gate structure, forming a first impurity region adjacent the gate spacer in the core-peri region of the substrate by performing a first ion implantation process, removing the gate spacer, forming a second impurity region in the core-peri region of the substrate between the gate structure and the first impurity region by performing a second ion implantation process, forming a stress film on the gate structure, an upper surface of the first impurity region, and an upper surface of the second impurity region, and forming a recrystallization region by crystallizing the first impurity region and the second impurity region by performing an annealing process.

公开(公告)号：US10892263B2

公开(公告)日：2021-01-12

申请号：US16270865

申请日：2019-02-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoi Sung Chung ,  Tae Sung Kang ,  Dong Suk Shin ,  Kong Soo Lee ,  Jun-Won Lee

IPC: H01L21/336 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L27/108 ,  H01L21/265 ,  H01L29/66 ,  H01L21/02 ,  H01L21/768 ,  H01L29/51 ,  H01L21/311 ,  H01L21/324 ,  H01L29/08 ,  H01L29/40 ,  H01L21/266 ,  H01L29/04

Abstract: Methods of fabricating a semiconductor device are provided. The methods may include forming a gate structure on a core-peri region of a substrate. The substrate may further include a cell region. The methods may also include forming a gate spacer on a sidewall of the gate structure, forming a first impurity region adjacent the gate spacer in the core-peri region of the substrate by performing a first ion implantation process, removing the gate spacer, forming a second impurity region in the core-peri region of the substrate between the gate structure and the first impurity region by performing a second ion implantation process, forming a stress film on the gate structure, an upper surface of the first impurity region, and an upper surface of the second impurity region, and forming a recrystallization region by crystallizing the first impurity region and the second impurity region by performing an annealing process.