公开(公告)号：US20250167012A1

公开(公告)日：2025-05-22

申请号：US18794556

申请日：2024-08-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Junho YOON ,  Young-Hoo KIM ,  Taeheon KIM ,  Woogwan SHIM ,  Jongwon LEE ,  Junho LEE ,  Jiwoong JUNG

IPC: H01L21/67 ,  B08B3/04 ,  B08B3/08 ,  H01L21/02

Abstract: A substrate processing apparatus includes a stage configured to support a substrate, a rotation driving portion configured to rotate the stage around a first axis extending in a vertical direction, a first nozzle arm disposed on the stage and configured to rotate around a second axis parallel to the first axis, and a second nozzle arm disposed on the stage and configured to rotate around a third axis parallel to the second axis. The first nozzle arm includes a first nozzle supporting member extended parallel to the stage, a first connection member coupled to an end of the first nozzle supporting member, the first connection member having a stepwise shape, and a first nozzle coupled to the first connection member and configured to spray a fluidic material.

公开(公告)号：US20240076550A1

公开(公告)日：2024-03-07

申请号：US18333154

申请日：2023-06-12

Applicant: Samsung Electronics Co., Ltd. ,  FOOSUNG CO., LTD.

Inventor： Hyeunwoong HONG ,  Woohyeop KWON ,  Hyeongeun AHN ,  Wooin JUNG ,  Dongkyeong KANG ,  Donghyun KIM ,  Taeheon KIM ,  Hyunjeong KIM ,  Changsu LEE ,  Kangyeob JEON ,  Jungheun MOON ,  Chulhwan MOON ,  Byungwon WOO ,  Jungeun LEE ,  Junhee LEE ,  Hyejeong JEONG ,  Taeseok LEE ,  Kangsan HONG ,  Soonkil JOUNG

IPC: C09K13/08 ,  C03C15/00

CPC classification number: C09K13/08 ,  C03C15/00

Abstract: A composition for surface treatment includes fluorosilicic acid (H2SiF6) and hydrofluoric acid (HF), and/or a surface treatment method using the same. The composition may be used to treat (e.g., etch) a substrate such as glass or the like.

公开(公告)号：US20250125160A1

公开(公告)日：2025-04-17

申请号：US18908049

申请日：2024-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeheon KIM ,  Junho LEE ,  Younghoo KIM ,  Junho YOON ,  Jongwon LEE ,  Jiwoong JUNG ,  Jihoon JEONG

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a process chamber including a processing space, a substrate support configured to support a substrate in the process chamber, a fluid supply tube arranged in a lower portion of the process chamber, and a fluid supply device configured to supply a supercritical fluid to the processing space through the fluid supply tube, wherein the substrate support includes a plate structure, which is arranged in a central region of the substrate support, and on which the substrate is settled, a turbulence reduction body having a ring shape and joined to an outer portion of the plate structure, and a turbulence reduction wing joined to an outer portion of the turbulence reduction body and tilted at a certain angle toward the lower portion of the process chamber.