公开(公告)号：US20220325953A1

公开(公告)日：2022-10-13

申请号：US17493346

申请日：2021-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Youngtae KIM ,  Jihoon JEONG ,  Younghoo KIM

IPC: F26B5/00 ,  H01L21/67 ,  G03F7/40 ,  F26B3/02

Abstract: A fluid supply device configured to supply a processing fluid to a wafer processing device that includes a chamber is provided. The fluid supply device includes a reservoir configured to change the processing fluid into a supercritical fluid state; a wafer protecting device comprising a body configured to prevent a wafer in the chamber of the wafer processing device from being damaged by the processing fluid in the supercritical fluid state by receiving the processing fluid in the supercritical fluid state and limiting a speed of the processing fluid; and a fluid supply line configured to provide a path for the processing fluid between the reservoir and the wafer protecting device and a path for the processing fluid between the wafer protecting device and the wafer processing device.

公开(公告)号：US20220208558A1

公开(公告)日：2022-06-30

申请号：US17559766

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Seohyun KIM ,  Sukhoon KIM ,  Jihoon JEONG ,  Younghoo KIM ,  Kuntack LEE

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/308 ,  G03F7/32 ,  G03F7/20

Abstract: A substrate processing method includes providing a surface tension reducing agent as a gas onto a substrate, the substrate having an exposed photoresist layer and layer of developer on the exposed photoresist layer, and causing a bulk flow of the developer in order to remove the developer from the substrate.

公开(公告)号：US20240339334A1

公开(公告)日：2024-10-10

申请号：US18747951

申请日：2024-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Seohyun KIM ,  Sukhoon KIM ,  Jihoon JEONG ,  Younghoo KIM ,  Kuntack LEE

IPC: H01L21/3213 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/32139 ,  G03F7/2004 ,  G03F7/3021 ,  G03F7/325 ,  H01L21/308 ,  H01L21/31144

Abstract: A substrate processing apparatus includes a processing chamber having an internal space and a substrate support within the internal space, a surface tension reducing agent supply system that supplies a surface tension reducing agent as a gas to the processing chamber, and a controller that controls the supply of the surface tension reducing agent via the surface tension reducing agent supply system. The surface tension reducing agent supply system includes at least one supply port that is configured to supply the surface tension reducing agent to the internal space and at least one discharge port that is configured to remove developer from the internal space.

公开(公告)号：US20250125160A1

公开(公告)日：2025-04-17

申请号：US18908049

申请日：2024-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeheon KIM ,  Junho LEE ,  Younghoo KIM ,  Junho YOON ,  Jongwon LEE ,  Jiwoong JUNG ,  Jihoon JEONG

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a process chamber including a processing space, a substrate support configured to support a substrate in the process chamber, a fluid supply tube arranged in a lower portion of the process chamber, and a fluid supply device configured to supply a supercritical fluid to the processing space through the fluid supply tube, wherein the substrate support includes a plate structure, which is arranged in a central region of the substrate support, and on which the substrate is settled, a turbulence reduction body having a ring shape and joined to an outer portion of the plate structure, and a turbulence reduction wing joined to an outer portion of the turbulence reduction body and tilted at a certain angle toward the lower portion of the process chamber.

公开(公告)号：US20220301827A1

公开(公告)日：2022-09-22

申请号：US17685097

申请日：2022-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woorim LEE ,  Sunggil KANG ,  Inseong KIM ,  Gonjun KIM ,  Younghoo KIM

IPC: H01J37/32 ,  H01L21/683

Abstract: A manufacturing method includes depositing a chamber protective layer in a chamber, supplying a first purge gas to the chamber, transferring a substrate to the chamber, the substrate being disposed inside an edge ring on an electrostatic chuck, processing the substrate, supplying a second purge gas to the chamber, transferring the substrate to an outside of the chamber, removing the chamber protective layer, and supplying a third purge gas to the chamber. Variation of the surface roughness of the edge ring may be minimal. A ratio of an edge gas flow rate of gas supplied to an edge of the substrate and the edge ring to a central gas flow rate of gas supplied to a central portion of the substrate in the processing the substrate may be 0.05 to 19. The flow rate ratio may be more than 1 in the supplying the second purge gas.

公开(公告)号：US20220230872A1

公开(公告)日：2022-07-21

申请号：US17398219

申请日：2021-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hunjae JANG ,  Seungmin SHIN ,  Kuntack LEE ,  Seungho KIM ,  Younghoo KIM ,  Taehong KIM ,  Sunghyun PARK

IPC: H01L21/02 ,  B08B3/10 ,  B08B7/00 ,  B08B3/08

Abstract: A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.