公开(公告)号：US20240339334A1

公开(公告)日：2024-10-10

申请号：US18747951

申请日：2024-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Seohyun KIM ,  Sukhoon KIM ,  Jihoon JEONG ,  Younghoo KIM ,  Kuntack LEE

IPC: H01L21/3213 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/32139 ,  G03F7/2004 ,  G03F7/3021 ,  G03F7/325 ,  H01L21/308 ,  H01L21/31144

Abstract: A substrate processing apparatus includes a processing chamber having an internal space and a substrate support within the internal space, a surface tension reducing agent supply system that supplies a surface tension reducing agent as a gas to the processing chamber, and a controller that controls the supply of the surface tension reducing agent via the surface tension reducing agent supply system. The surface tension reducing agent supply system includes at least one supply port that is configured to supply the surface tension reducing agent to the internal space and at least one discharge port that is configured to remove developer from the internal space.

公开(公告)号：US20200227253A1

公开(公告)日：2020-07-16

申请号：US16561078

申请日：2019-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Byung-Kwon CHO ,  Jihoon JEONG ,  Youngtak KIM ,  Yongsun KO ,  Seulgee JEON

IPC: H01L21/02 ,  H01L21/67

Abstract: A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.

公开(公告)号：US20220415643A1

公开(公告)日：2022-12-29

申请号：US17660449

申请日：2022-04-25

Applicant: Semes Co., Ltd. ,  Samsung Electronics Co., Ltd.

Inventor： Hae-Won CHOI ,  Anton KORIAKIN ,  Sangjine Park PARK ,  Keonyoung KIM ,  Sukhoon KIM ,  Seohyun KIM ,  Young-Hoo KIM ,  Kuntack LEE ,  Jihoon JEONG

IPC: H01L21/02 ,  H01L21/67 ,  C11D11/00 ,  C11D3/43 ,  C11D1/72

Abstract: In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

公开(公告)号：US20210020462A1

公开(公告)日：2021-01-21

申请号：US16739409

申请日：2020-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Mihyun PARK ,  Yongsun KO ,  Kwangwook LEE ,  Kuntack LEE ,  Hayoung JEON ,  Yongjhin CHO ,  Jihoon CHA

IPC: H01L21/67 ,  H01L21/02 ,  B08B3/08

Abstract: A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.

公开(公告)号：US20170069485A1

公开(公告)日：2017-03-09

申请号：US15176972

申请日：2016-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon JEONG ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02057 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/02101 ,  H01L21/31111 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/67276

Abstract: In embodiment, the method includes cleaning a preceding substrate, and drying the preceding substrate and cleaning a next substrate. Drying the preceding substrate and cleaning the next substrate include determining a cleaning start time of the next substrate, and the cleaning start time corresponds to a desired time point after starting drying the preceding substrate.

Abstract translation: 在实施例中，该方法包括清洗前面的衬底，干燥前面的衬底并清洁下一个衬底。 干燥前面的衬底并清洁下一个衬底包括确定下一个衬底的清洁开始时间，并且清洁开始时间对应于在开始干燥前面的衬底之后的期望时间点。

公开(公告)号：US20150303036A1

公开(公告)日：2015-10-22

申请号：US14611618

申请日：2015-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Gil Hun SONG ,  Ki Sang EUM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01J37/32

CPC classification number: H01J37/32513

Abstract: A substrate treatment apparatus includes a seal on at least one of upper or lower chambers of a process chamber. The seal hermetically closes the substrate treatment region, and may be at a location to prevent a gap from forming between the upper and lower chambers. The lower chamber includes an inner wall and an outer wall defining a groove including the seal. The inner wall has a top surface lower than that of the outer wall. The seal has an atypical cross-sectional shape with a recess facing the substrate treatment region.

Abstract translation: 基板处理装置包括在处理室的上室或下室中的至少一个上的密封。 密封件密封地封闭基板处理区域，并且可以在防止在上部室和下部室之间形成间隙的位置。 下室包括限定包括密封件的槽的内壁和外壁。 内壁具有比外壁低的顶面。 密封件具有非对应的横截面形状，其具有面向衬底处理区域的凹部。

公开(公告)号：US20220325953A1

公开(公告)日：2022-10-13

申请号：US17493346

申请日：2021-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Youngtae KIM ,  Jihoon JEONG ,  Younghoo KIM

IPC: F26B5/00 ,  H01L21/67 ,  G03F7/40 ,  F26B3/02

Abstract: A fluid supply device configured to supply a processing fluid to a wafer processing device that includes a chamber is provided. The fluid supply device includes a reservoir configured to change the processing fluid into a supercritical fluid state; a wafer protecting device comprising a body configured to prevent a wafer in the chamber of the wafer processing device from being damaged by the processing fluid in the supercritical fluid state by receiving the processing fluid in the supercritical fluid state and limiting a speed of the processing fluid; and a fluid supply line configured to provide a path for the processing fluid between the reservoir and the wafer protecting device and a path for the processing fluid between the wafer protecting device and the wafer processing device.

公开(公告)号：US20220208558A1

公开(公告)日：2022-06-30

申请号：US17559766

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Seohyun KIM ,  Sukhoon KIM ,  Jihoon JEONG ,  Younghoo KIM ,  Kuntack LEE

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/308 ,  G03F7/32 ,  G03F7/20

Abstract: A substrate processing method includes providing a surface tension reducing agent as a gas onto a substrate, the substrate having an exposed photoresist layer and layer of developer on the exposed photoresist layer, and causing a bulk flow of the developer in order to remove the developer from the substrate.

公开(公告)号：US20250125160A1

公开(公告)日：2025-04-17

申请号：US18908049

申请日：2024-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeheon KIM ,  Junho LEE ,  Younghoo KIM ,  Junho YOON ,  Jongwon LEE ,  Jiwoong JUNG ,  Jihoon JEONG

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a process chamber including a processing space, a substrate support configured to support a substrate in the process chamber, a fluid supply tube arranged in a lower portion of the process chamber, and a fluid supply device configured to supply a supercritical fluid to the processing space through the fluid supply tube, wherein the substrate support includes a plate structure, which is arranged in a central region of the substrate support, and on which the substrate is settled, a turbulence reduction body having a ring shape and joined to an outer portion of the plate structure, and a turbulence reduction wing joined to an outer portion of the turbulence reduction body and tilted at a certain angle toward the lower portion of the process chamber.

公开(公告)号：US20220415680A1

公开(公告)日：2022-12-29

申请号：US17664243

申请日：2022-05-20

Applicant: Semes Co., Ltd. ,  Samsung Electronics Co., Ltd.

Inventor： Jaeseong LEE ,  Kihoon CHOI ,  Hae-Won CHOI ,  Jihoon JEONG ,  Seohyun KIM ,  Young-Hoo KIM ,  Sangjine PARK ,  Kuntack LEE

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.