公开(公告)号：US10747680B2

公开(公告)日：2020-08-18

申请号：US15860511

申请日：2018-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Young Yang ,  Heon Gwon Lee

IPC: G06F12/1009 ,  G06F12/12 ,  G06F12/02 ,  G11C11/56

Abstract: A storage device, a storage system comprising the same, and operating methods of the storage device are provided. The storage device includes a first nonvolatile memory cell array which includes a plurality of cell strings arranged in a direction perpendicular to a substrate, and stores first data at a first address, a second nonvolatile memory cell array which stores second data selected from the first data at a second address, in accordance with an access pattern to the first data, and a memory controller which manages a first mapping table indicating that the second data is stored at the second address of the second nonvolatile memory cell array, and a second mapping table indicating that the first data as original data of the second data is stored at the first address.

公开(公告)号：US09923159B2

公开(公告)日：2018-03-20

申请号：US15131165

申请日：2016-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young Kim ,  Jiyoung Jung ,  Jeong Il Park ,  Woo Young Yang ,  Youngjun Yun ,  Eun Kyung Lee ,  Ajeong Choi

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0533 ,  H01L51/0003 ,  H01L51/0005 ,  H01L51/0011 ,  H01L51/0074

Abstract: A thin film transistor includes a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and a source electrode and a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. A method of manufacturing the thin film transistor and an electronic device including the thin film transistor are provided.