公开(公告)号：US20250081429A1

公开(公告)日：2025-03-06

申请号：US18664753

申请日：2024-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youmin Ban ,  Daeyoung Moon ,  Changwoo Seo ,  Suyoun Song ,  Hyungjun Hwang

IPC: H10B12/00

Abstract: A semiconductor device includes a substrate, an active region defined by a device isolation layer within the substrate, a word line extending in a first horizontal direction within the substrate, a bit line extending on the substrate in a second horizontal direction intersecting with the first horizontal direction and including a metal-based conductive pattern, a first spacer on a sidewall of the metal-based conductive pattern, a second spacer on the first spacer, a direct contact in a direct contact hole exposing the active region and electrically connecting the bit line to the active region, and a buried spacer on a lower sidewall of the direct contact within the direct contact hole, wherein the second spacer contacts a sidewall of the direct contact on the sidewall of the direct contact.

公开(公告)号：US20240306375A1

公开(公告)日：2024-09-12

申请号：US18444390

申请日：2024-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suyoun Song ,  Yoongoo Kang ,  Kyungwook Park ,  Youmin Ban ,  Changwoo Seo ,  Hyunchul Shim

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/02

Abstract: An integrated circuit device includes a substrate having a plurality of active regions, a bit line extending in a horizontal direction on the substrate, an insulating capping pattern formed on the bit line and extending along the bit line, a direct contact disposed in a direct contact hole formed on the substrate and connected between a first active region selected from among the plurality of active regions and the bit line, and a spacer structure contacting a sidewall of the direct contact and a sidewall of the bit line The spacer structure includes a first spacer layer extending in a vertical direction on the sidewall of the direct contact and the sidewall of the bit line, and a second spacer layer covering at least a portion of the first spacer layer and extending in the vertical direction.