-
公开(公告)号：US09825216B2
公开(公告)日：2017-11-21
申请号：US15244498
申请日：2016-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Hwan Park , Whankyun Kim , Keewon Kim , Youngman Jang
CPC classification number: H01L43/02 , H01F10/3254 , H01F10/3272 , H01L27/222 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.
-
公开(公告)号：US10483456B2
公开(公告)日：2019-11-19
申请号：US16191727
申请日：2018-11-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Hwan Park , Whankyun Kim , Keewon Kim , Youngman Jang
Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.
-
公开(公告)号：US10153422B2
公开(公告)日：2018-12-11
申请号：US15814588
申请日：2017-11-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Hwan Park , Whankyun Kim , Keewon Kim , Youngman Jang
Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.
-
公开(公告)号：US20170092848A1
公开(公告)日：2017-03-30
申请号：US15210627
申请日：2016-07-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngman Jang , Joonmyoung Lee , Keewon Kim , Yong Sung Park
Abstract: A magnetic memory device includes a magnetic tunnel junction pattern including a first free layer, a pinned layer, and a tunnel barrier layer between the first free layer and the pinned layer. The first free layer includes a first free magnetic pattern having a first surface in direct contact with the tunnel barrier layer and a second surface opposite to the first surface, and a second free magnetic pattern in contact with the second surface. The second free magnetic pattern includes iron-nickel (FeNi), and a nickel content of the second free magnetic pattern ranges from about 10 at % to about 30 at %.
-
-
-
Search Results
4
records
(took 0.018 seconds)
