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公开(公告)号：US20220238604A1
公开(公告)日：2022-07-28
申请号：US17510576
申请日：2021-10-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Keewon Kim , Byeongtaek Bae , Dail Eom , Minkyung Lee , Hajin Lim
Abstract: A photoelectric conversion device includes a substrate and a wiring layer disposed on the substrate. The wiring layer includes a wiring structure and a wiring insulating layer that surrounds the wiring structure. A reflective layer is disposed on the wiring layer. The reflective layer is electrically connected to the wiring structure. A semi-permeable metal layer is spaced apart from the reflective layer in a thickness direction of the substrate. The semi-permeable metal layer faces the reflective layer to form a microcavity between the reflective layer and the semi-permeable metal layer. A stacked structure is between the reflective layer and the semi-permeable metal layer in the thickness direction of the substrate. The stacked structure includes a photoelectric conversion layer, a transparent electrode layer, and an insulating optical spacer.
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公开(公告)号：US09923138B2
公开(公告)日：2018-03-20
申请号：US15375734
申请日：2016-12-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang Hwan Park , Kwangseok Kim , Keewon Kim , Jae Hoon Kim , Joonmyoung Lee
CPC classification number: H01L43/08 , G11C11/161 , H01L27/222 , H01L29/82 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: A memory device includes a magnetic tunnel junction comprising a first free layer, a pinned layer, and a tunnel barrier layer disposed between the first free layer and the pinned layer, wherein the first free layer comprises a first free magnetic pattern adjacent to the tunnel barrier layer, and a second free magnetic pattern spaced apart from the tunnel barrier layer with the first free magnetic pattern interposed therebetween, wherein the second free magnetic pattern contacts the first free magnetic pattern, wherein the first and second free magnetic patterns include boron (B), wherein a boron content of the first free magnetic pattern is higher than a boron content of the second free magnetic pattern, and wherein the boron content of the first free magnetic pattern is in a range of about 25 at % to about 50 at %.
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公开(公告)号：US12252778B2
公开(公告)日：2025-03-18
申请号：US17930728
申请日：2022-09-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Keewon Kim , Daehan Kim , Minkyung Lee
Abstract: Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporate.
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公开(公告)号：US09825216B2
公开(公告)日：2017-11-21
申请号：US15244498
申请日：2016-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Hwan Park , Whankyun Kim , Keewon Kim , Youngman Jang
CPC classification number: H01L43/02 , H01F10/3254 , H01F10/3272 , H01L27/222 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.
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公开(公告)号：US10153422B2
公开(公告)日：2018-12-11
申请号：US15814588
申请日：2017-11-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Hwan Park , Whankyun Kim , Keewon Kim , Youngman Jang
Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.
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Patent Agency Ranking
公开(公告)号：US20170092848A1
公开(公告)日：2017-03-30
申请号：US15210627
申请日：2016-07-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngman Jang , Joonmyoung Lee , Keewon Kim , Yong Sung Park
Abstract: A magnetic memory device includes a magnetic tunnel junction pattern including a first free layer, a pinned layer, and a tunnel barrier layer between the first free layer and the pinned layer. The first free layer includes a first free magnetic pattern having a first surface in direct contact with the tunnel barrier layer and a second surface opposite to the first surface, and a second free magnetic pattern in contact with the second surface. The second free magnetic pattern includes iron-nickel (FeNi), and a nickel content of the second free magnetic pattern ranges from about 10 at % to about 30 at %.
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公开(公告)号：US12108613B2
公开(公告)日：2024-10-01
申请号：US17510576
申请日：2021-10-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Keewon Kim , Byeongtaek Bae , Dail Eom , Minkyung Lee , Hajin Lim
Abstract: A photoelectric conversion device includes a substrate and a wiring layer disposed on the substrate. The wiring layer includes a wiring structure and a wiring insulating layer that surrounds the wiring structure. A reflective layer is disposed on the wiring layer. The reflective layer is electrically connected to the wiring structure. A semi-permeable metal layer is spaced apart from the reflective layer in a thickness direction of the substrate. The semi-permeable metal layer faces the reflective layer to form a microcavity between the reflective layer and the semi-permeable metal layer. A stacked structure is between the reflective layer and the semi-permeable metal layer in the thickness direction of the substrate. The stacked structure includes a photoelectric conversion layer, a transparent electrode layer, and an insulating optical spacer.
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公开(公告)号：US11512389B2
公开(公告)日：2022-11-29
申请号：US16714344
申请日：2019-12-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Keewon Kim , Daehan Kim , Minkyung Lee
Abstract: Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporator.
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公开(公告)号：US10825990B2
公开(公告)日：2020-11-03
申请号：US16589330
申请日：2019-10-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Da Il Eom , Keewon Kim , Byeongtaek Bae , Minkyung Lee
IPC: H01L51/00 , H01L27/30 , H01L51/42 , H01L21/66 , H01L27/146
Abstract: A method of measuring an image sensor is disclosed. The method includes connecting a measurement unit to an image sensor, producing an electric current, which sequentially flows through a second connection line, second lower electrodes, an upper electrode, first lower electrodes, and a first connection line of the image sensor, using the measurement unit, and measuring an alignment state of the lower electrodes, the photoelectric conversion layer, and the upper electrode.
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公开(公告)号：US10483456B2
公开(公告)日：2019-11-19
申请号：US16191727
申请日：2018-11-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Hwan Park , Whankyun Kim , Keewon Kim , Youngman Jang
Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.
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