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    Methods of manufacturing semiconductor chip
    1.
    发明授权
    Methods of manufacturing semiconductor chip 有权

    公开(公告)号：US11967529B2

    公开(公告)日：2024-04-23

    申请号：US17093991

    申请日：2020-11-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

    IPC: H01L23/544 ,  H01L21/768 ,  H01L21/78 ,  H01L23/00 ,  H01L23/532

    CPC classification number: H01L21/7806 ,  H01L23/53295 ,  H01L23/562

    Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

    X-ray detector, X-ray photographing apparatus including the same, and method of manufacturing the same
    2.
    发明授权
    X-ray detector, X-ray photographing apparatus including the same, and method of manufacturing the same 有权

    公开(公告)号：US10539690B2

    公开(公告)日：2020-01-21

    申请号：US16007856

    申请日：2018-06-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-hyuk Kim ,  Yun-hee Kim ,  Jea-eun Ryu

    IPC: G01T1/24 ,  G01T1/20 ,  A61B6/03 ,  A61B6/00

    Abstract: An X-ray detector, an X-ray photographing apparatus including the X-ray detector, and a method of manufacturing the X-ray detector are provided. The X-ray detector includes a photoconversion layer configured to convert an X-ray into light having a wavelength range that is different from a wavelength range of the X-ray, a sensing layer arranged on the photoconversion layer and including a plurality of pixels configured to output the light as an electrical signal, a protective layer arranged on the sensing layer and protecting the sensing layer from physical shocks, and an anti-static layer arranged on the protective layer and preventing an electrostatic charge from being introduced into the sensing layer.

    Display including electrowetting prism array
    3.
    发明授权
    Display including electrowetting prism array 有权

    公开(公告)号：US10036884B2

    公开(公告)日：2018-07-31

    申请号：US14031217

    申请日：2013-09-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun-hee Kim ,  Hoon Song ,  Jung-mok Bae ,  Kyu-hwan Choi ,  Yoon-sun Choi ,  Yong-joo Kwon

    IPC: G02F1/00 ,  G02B26/00 ,  G02B27/22

    CPC classification number: G02B26/005 ,  G02B27/2242

    Abstract: A display including an electrowetting prism array is provided. The display includes: a light source, a 2-dimensional (2D) display for providing an image using light from the light source, a prism array in which a refractive power of one or more prisms of the prism array is adjustable in real time, and an optical element which increases a refraction of light transmitted therethrough. In the display, the optical element may be disposed in front of or behind the prism array. The optical element may be a convex lens, a Fresnel lens, a holographic optical element (HOE), a diffraction optical element (DOE), or a second electrowetting prism array. The convex lens may be a variable focus lens.

    Methods of manufacturing semiconductor chip
    4.
    发明授权
    Methods of manufacturing semiconductor chip 有权

    公开(公告)号：US10854517B2

    公开(公告)日：2020-12-01

    申请号：US16359440

    申请日：2019-03-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

    IPC: H01L21/78 ,  H01L23/00 ,  H01L23/532

    Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

    METHODS OF MANUFACTURING SEMICONDUCTOR CHIP
    5.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR CHIP 审中-公开

    公开(公告)号：US20200058551A1

    公开(公告)日：2020-02-20

    申请号：US16359440

    申请日：2019-03-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

    IPC: H01L21/78 ,  H01L23/532 ,  H01L23/00

    Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

    METHODS OF MANUFACTURING SEMICONDUCTOR CHIP
    10.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR CHIP 有权

    公开(公告)号：US20210057278A1

    公开(公告)日：2021-02-25

    申请号：US17093991

    申请日：2020-11-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byung-moon Bae ,  Yoon-sung Kim ,  Yun-hee Kim ,  Hyun-su Sim ,  Jun-ho Yoon ,  Jung-ho Choi

    IPC: H01L21/78 ,  H01L23/00 ,  H01L23/532

    Abstract: Methods of manufacturing a semiconductor chip are provided. The methods may include providing a semiconductor substrate including integrated circuit regions and a cut region. The cut region may be between the integrated circuit regions. The methods may also include forming a modified layer by emitting a laser beam into the semiconductor substrate along the cut region, polishing an inactive surface of the semiconductor substrate to propagate a crack from the modified layer, and separating the integrated circuit regions along the crack. The cut region may include a plurality of multilayer metal patterns on an active surface of the semiconductor substrate, which is opposite to the inactive surface of the semiconductor substrate. The plurality of multilayer metal patterns may form a pyramid structure when viewed in cross section.

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