公开(公告)号：US20130347118A1

公开(公告)日：2013-12-26

申请号：US13921714

申请日：2013-06-19

Applicant: Samsung Electronics Co. Ltd.

Inventor： Jungbae YI ,  Jaehyun YOO

IPC: G06F21/10

CPC classification number: G06F21/10 ,  G06F21/105 ,  G06F21/50

Abstract: A method and apparatus for verifying licenses of binary files and to a computer readable storage medium storing a program realizing license verification is provided. The method includes obtaining a binary file, extracting a character string to be searched for from the obtained binary file, and comparing the extracted character string against a knowledge base created according to a license to be verified, an apparatus capable of executing the license verification method, and a computer readable storage medium storing a program realizing the license verification method.

Abstract translation: 提供一种用于验证二进制文件的许可证和存储实现许可证验证的程序的计算机可读存储介质的方法和装置。 该方法包括获取二进制文件，从所获得的二进制文件中提取要搜索的字符串，并将所提取的字符串与根据要验证的许可证创建的知识库进行比较，能够执行许可证验证方法 以及存储实现许可证验证方法的程序的计算机可读存储介质。

公开(公告)号：US20220376119A1

公开(公告)日：2022-11-24

申请号：US17585284

申请日：2022-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehyun YOO ,  Kyuok LEE ,  Uihui KWON ,  Junhyeok KIM ,  Yongwoo JEON ,  Dawon JEONG ,  Jaehyok KO

IPC: H01L29/861 ,  H01L29/40 ,  H01L29/06

Abstract: A semiconductor protection device includes: an N-type epitaxial layer, a device isolation layer disposed in the N-type epitaxial layer, an N-type drift region disposed below the device isolation layer, an N-type well disposed in the N-type drift region, first and second P-type drift regions, respectively disposed to be in contact with the device isolation layer, and spaced apart from the N-type drift region, first and second P-type doped regions, respectively disposed in the first and second P-type drift regions, first and second N-type floating wells, respectively disposed in the first and second P-type drift regions to be spaced apart from the first and second P-type doped regions, and disposed to be in contact with the device isolation layer, and first and second contact layer, respectively disposed to cover the first and second N-type floating well, to be in contact with the device isolation layer.