公开(公告)号：US20230352509A1

公开(公告)日：2023-11-02

申请号：US18067393

申请日：2022-12-16

申请人： Samsung Electronics Co., Ltd.

发明人： Seonghoon KO ,  Jae Ho KIM ,  Uihui KWON ,  Wook LEE

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683

摘要： An image sensor includes a substrate including first and second pixel regions adjacent to each other, the substrate including first and second surfaces opposite to each other, a pixel isolation pattern in the substrate to define the first and second pixel regions, a transfer gate on the first surface of the substrate of the first pixel region, a floating diffusion region adjacent to a side of the transfer gate, a first ground dopant region adjacent to the first surface of the substrate in the first pixel region, and a second ground dopant region adjacent to the first surface of the substrate in the second pixel region. A bottom surface of the first ground dopant region is located at a lower level than a bottom surface of the floating diffusion region.

公开(公告)号：US20220376119A1

公开(公告)日：2022-11-24

申请号：US17585284

申请日：2022-01-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jaehyun YOO ,  Kyuok LEE ,  Uihui KWON ,  Junhyeok KIM ,  Yongwoo JEON ,  Dawon JEONG ,  Jaehyok KO

IPC分类号： H01L29/861 ,  H01L29/40 ,  H01L29/06

摘要： A semiconductor protection device includes: an N-type epitaxial layer, a device isolation layer disposed in the N-type epitaxial layer, an N-type drift region disposed below the device isolation layer, an N-type well disposed in the N-type drift region, first and second P-type drift regions, respectively disposed to be in contact with the device isolation layer, and spaced apart from the N-type drift region, first and second P-type doped regions, respectively disposed in the first and second P-type drift regions, first and second N-type floating wells, respectively disposed in the first and second P-type drift regions to be spaced apart from the first and second P-type doped regions, and disposed to be in contact with the device isolation layer, and first and second contact layer, respectively disposed to cover the first and second N-type floating well, to be in contact with the device isolation layer.

公开(公告)号：US20210063999A1

公开(公告)日：2021-03-04

申请号：US16992919

申请日：2020-08-13

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jaeho KIM ,  Kanghyun Baek ,  Kwanghee LEE ,  Yongwoo Jeon ,  Uihui KWON ,  Yoonsuk Kim

IPC分类号： G05B19/4097 ,  G06N20/00

摘要： A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product, generating first semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained through machine learning based on training data including TCAD simulation data, generating second semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a compact model generated based on information of measurement of at least one semiconductor characteristic of a first semiconductor product, generating, based on the first semiconductor characteristic data and the second semiconductor characteristic data, a plurality of process policies respectively corresponding to a plurality of strategic references, by using a plurality of strategy models; and providing a final process policy corresponding to the target semiconductor product based on the plurality of process policies.

公开(公告)号：US20240113182A1

公开(公告)日：2024-04-04

申请号：US18538575

申请日：2023-12-13

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yonghee PARK ,  Myunggil KANG ,  Uihui KWON ,  Seungkyu KIM ,  Ahyoung KIM ,  Ahyoung KIM ,  Youngseok SONG

IPC分类号： H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L29/41775 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78696

摘要： An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.

公开(公告)号：US20220165857A1

公开(公告)日：2022-05-26

申请号：US17352973

申请日：2021-06-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yonghee PARK ,  Myunggil KANG ,  Uihui KWON ,  Seungkyu KIM ,  Ahyoung KIM ,  Youngseok SONG

IPC分类号： H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L27/088

摘要： An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.

公开(公告)号：US20140332863A1

公开(公告)日：2014-11-13

申请号：US14248594

申请日：2014-04-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JaeHoo PARK ,  Daewon HA ,  Uihui KWON ,  Sung-Dae SUK

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L27/092 ,  H01L29/66795 ,  H01L29/7853

摘要： Provided are a semiconductor device and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an active fin on a substrate; oxidizing a portion of the active fin to form an insulating pattern between the active fin and the substrate; forming a first gate pattern on the substrate, wherein the first gate pattern crosses the active fin; exposing the substrate on both sides of the first gate pattern; and forming source/drain regions on the exposed substrate.

摘要翻译： 提供半导体器件及其制造方法。 制造半导体器件的方法包括：在衬底上形成有源散热片; 氧化活性鳍片的一部分以在活性鳍片和衬底之间形成绝缘图案; 在所述衬底上形成第一栅极图案，其中所述第一栅极图案与所述有源鳍片交叉; 在第一栅极图案的两侧上暴露衬底; 以及在暴露的衬底上形成源极/漏极区域。