Abstract:
a method of correcting a layout for semiconductor process includes receiving a design layout including a layout pattern for the semiconductor process to form a process pattern of a semiconductor device, where the design layout comprises a pixel-based image associated with the layout pattern and edge information associated with the layout pattern; performing a first layout correction operation on the design layout using a first machine learning model that takes the pixel-based image as input; performing a second layout correction operation on the design layout using a second machine learning model different from the first machine learning model that takes the edge information as input; and obtaining a corrected design layout including a corrected layout pattern corresponding to the layout pattern based on a result of the first layout correction operation and a result of the second layout correction operation.
Abstract:
Disclosed is an operating method of an electronic device which includes receiving a design layout for manufacturing the semiconductor device, generating a first layout by performing machine learning-based process proximity correction (PPC), generating a second layout by performing optical proximity correction (OPC), and outputting the second layout for a semiconductor process. The generating of the first layout includes generating a first after cleaning inspection (ACI) layout by executing a machine learning-based process proximity correction module on the design layout, generating a second after cleaning inspection layout by adjusting the design layout based on a difference of the first after cleaning inspection layout and the design layout and executing the process proximity correction module on the adjusted layout, and outputting the adjusted layout as the first layout, when a difference between the second after cleaning inspection layout and the design layout is smaller than or equal to a threshold value.
Abstract:
A substrate processing system and a method of coating a ceramic layer therewith are provided. The system may include a chamber and a ceramic layer on an inner surface of the chamber. The ceramic layer may include yttrium oxyfluoride (YxOyFz), where x=1, y=1, 2, and z=1, 2.
Abstract:
A method and an apparatus for measuring performance of an electronic device are provided. The apparatus includes an electromagnetic wave measuring device for measuring an actual level of an electromagnetic wave of an electronic device, and an analysis controller for applying a previously stored level change value to the actual level of the electromagnetic wave to compute a measured level of the electromagnetic wave. The method and the apparatus for measuring performance of an electronic device can easily measure an electromagnetic wave level of the electronic device without using a device suggested by an international standard.