公开(公告)号：US09768808B2

公开(公告)日：2017-09-19

申请号：US14885883

申请日：2015-10-16

Applicant: SanDisk Technologies LLC

Inventor： Steven T. Sprouse ,  Aaron K. Olbrich ,  James Fitzpatrick ,  Neil R. Darragh

IPC: G11C29/00 ,  H03M13/35 ,  G11C29/52 ,  H03M13/00 ,  G06F11/10 ,  G11C29/02 ,  G11C29/04

CPC classification number: H03M13/353 ,  G06F11/1048 ,  G11C29/028 ,  G11C29/52 ,  G11C2029/0411 ,  H03M13/6356 ,  H03M13/6362 ,  H03M13/6513

Abstract: The various implementations described herein include systems, methods and/or devices for modifying an error correction format of a respective memory portion of non-volatile memory in a storage device. In one aspect, the method includes, for respective memory portions of the non-volatile memory, obtaining a performance metric of the respective memory portion, and modifying a current error correction format in accordance with the measured performance metric, the current error correction format corresponding to a code rate, codeword structure, and error correction type. Furthermore, data is stored, and errors are detected and corrected, in the respective memory portion in accordance with the modified error correction format. The current and modified error correction formats are distinct, and comprise two of a sequence of predefined error correction formats, wherein a plurality of the sequence of predefined error correction formats have a same number of error correction bits and different numbers of data bits.