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    METHODS OF MAKING A NEAR FIELD TRANSDUCER WITH A FLARE PEG
    3.
    发明申请
    METHODS OF MAKING A NEAR FIELD TRANSDUCER WITH A FLARE PEG 有权
    使用FLARE PEG制造近场传感器的方法

    公开(公告)号：US20140251948A1

    公开(公告)日：2014-09-11

    申请号：US13789252

    申请日：2013-03-07

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Yongjun Zhao ,  Dongsung Hong ,  Lijuan Zou ,  Mark Ostrowski

    IPC: G11B5/127

    CPC classification number: G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021

    Abstract: The disclosed methods enable the production of plasmonic near-field transducers that are useful in heat-assisted magnetic recording. The plasmonic near-field transducers have an enlarged region and a peg region. The peg region includes a peg region in proximity to an air-bearing surface above a recording medium and also includes a flared region between and in contact with the enlarged region and the peg region. The flared region can act as a heat sink and can lower the thermal resistance of the peg portion of the near-field transducer, thus reducing its temperature.

    Abstract translation: 所公开的方法使得能够生产在热辅助磁记录中有用的等离子体激元近场换能器。 等离子体激元近场换能器具有扩大的区域和钉区域。 钉区域包括靠近记录介质上方的空气轴承表面的钉区域，并且还包括在扩大区域和钉区域之间并与其接触的扩口区域。 扩口区域可以用作散热器，并且可以降低近场换能器的钉部分的热阻，从而降低其温度。

    Alignment mark recovery with reduced topography
    4.
    发明授权
    Alignment mark recovery with reduced topography 有权
    对齐标记恢复与减少的地形

    公开(公告)号：US09385089B2

    公开(公告)日：2016-07-05

    申请号：US13753792

    申请日：2013-01-30

    Applicant: Seagate Technology LLC

    Inventor： Dongsung Hong ,  Lijuan Zou ,  Daniel Sullivan ,  Lily Horng Youtt

    IPC: H01L21/76 ,  H01L21/46 ,  H01L23/544

    CPC classification number: H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: When opaque films are deposited on semi-conductor wafers, underlying alignment marks may be concealed. The re-exposure of such alignment marks is one source of resulting surface topography. In accordance with one implementation, alignment marks embedded in a wafer may be exposed by removing material from one or more layers and by replacing such material with a transparent material. In accordance with another implementation, the amount of material removed in an alignment mark recovery process may be mitigated by selectively ashing or etching above a stop layer.

    Abstract translation: 当不透明膜沉积在半导体晶片上时，潜在的对准标记可能被隐藏。 这种对准标记的再曝光是所得表面形貌的一个来源。 根据一个实施方案，嵌入在晶片中的对准标记可以通过从一个或多个层去除材料并且用透明材料代替这样的材料来暴露。 根据另一实施方式，可以通过选择性地在停止层上方进行灰化或蚀刻来减轻在对准标记恢复过程中去除的材料的量。

    Methods of making a near field transducer with a flare peg
    5.
    发明授权
    Methods of making a near field transducer with a flare peg 有权
    制造带有喇叭钉的近场换能器的方法

    公开(公告)号：US09378757B2

    公开(公告)日：2016-06-28

    申请号：US13789252

    申请日：2013-03-07

    Applicant: Seagate Technology LLC

    Inventor： Yongjun Zhao ,  Dongsung Hong ,  Lijuan Zou ,  Mark Ostrowski

    IPC: G11B5/10 ,  G11B5/31 ,  G11B5/60 ,  G11B5/00

    CPC classification number: G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021

    Abstract: The disclosed methods enable the production of plasmonic near-field transducers that are useful in heat-assisted magnetic recording. The plasmonic near-field transducers have an enlarged region and a peg region. The peg region includes a peg region in proximity to an air-bearing surface above a recording medium and also includes a flared region between and in contact with the enlarged region and the peg region. The flared region can act as a heat sink and can lower the thermal resistance of the peg portion of the near-field transducer, thus reducing its temperature.

    Abstract translation: 所公开的方法使得能够生产在热辅助磁记录中有用的等离子体激元近场换能器。 等离子体激元近场换能器具有扩大的区域和钉区域。 钉区域包括靠近记录介质上方的空气轴承表面的钉区域，并且还包括在扩大区域和钉区域之间并与其接触的扩口区域。 扩口区域可以用作散热器，并且可以降低近场换能器的钉部分的热阻，从而降低其温度。

    NANOIMPRINT LITHOGRAPHY FOR THIN FILM HEADS
    6.
    发明申请
    NANOIMPRINT LITHOGRAPHY FOR THIN FILM HEADS 有权
    用于薄膜头的NANOIMPRINT LITHOGRAPHY

    公开(公告)号：US20140254338A1

    公开(公告)日：2014-09-11

    申请号：US13791130

    申请日：2013-03-08

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Andrew David Habermas ,  Dongsung Hong ,  Daniel Boyd Sullivan

    IPC: G11B5/31 ,  G11B13/04

    CPC classification number: G11B5/3163 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/314 ,  Y10S977/887

    Abstract: Nanoimprint lithography can be used in a variety of ways to improve resolution, pattern fidelity and symmetry of microelectronic structures for thin film head manufacturing. For example, write poles, readers, and near-field transducers can be manufactured with tighter tolerances that improve the performance of the microelectronic structures. Further, entire bars of thin film heads can be manufactured simultaneously using nanoimprint lithography, which reduces or eliminated alignment errors between neighboring thin film heads in a bar of thin film heads.

    Abstract translation: 纳米压印光刻可以以各种方式用于提高薄膜头制造的微电子结构的分辨率，图案保真度和对称性。 例如，写极点，读取器和近场换能器可以用更严格的公差制造，从而改善微电子结构的性能。 此外，可以使用纳米压印光刻法同时制造薄膜头的整个条，这减少或消除了薄膜头中的相邻薄膜头之间的对准误差。

    RECESSED HARDMASK USED TO FORM HAMR NFT HEAT SINK
    7.
    发明申请
    RECESSED HARDMASK USED TO FORM HAMR NFT HEAT SINK 审中-公开

    公开(公告)号：US20170194022A1

    公开(公告)日：2017-07-06

    申请号：US14987058

    申请日：2016-01-04

    Applicant: Seagate Technology LLC

    Inventor： Anusha Natarajarathinam ,  Yongjun Zhao ,  Hui Brickner ,  Dongsung Hong

    IPC: G11B5/127

    CPC classification number: G11B5/1272 ,  G11B5/105 ,  G11B5/3136 ,  G11B5/3163 ,  G11B5/40 ,  G11B2005/0021

    Abstract: A method involves depositing a near-field transducer on a substrate of a slider. The near-field transducer comprises a plate-like enlarged portion and a peg portion. A first hard stop extending from the near field transducer and an air bearing surface is formed. A heat sink is formed on the enlarged portion and the first hard stop. A dielectric material is deposited over the near-field transducer and the heat sink. A second hard stop is deposited on the dielectric material away from the air bearing surface. The second hard stop comprises a recess corresponding in size and location to the heat sink. The method involves milling at an oblique angle to the substrate between the first hard stop and second hard stop to cut through the heat sink at the angle. The recess of the second hard stop increases a milling rate over the heat sink compared to a second milling rate of the dielectric away from the heat sink.

    ALIGNMENT MARK RECOVERY WITH REDUCED TOPOGRAPHY
    8.
    发明申请
    ALIGNMENT MARK RECOVERY WITH REDUCED TOPOGRAPHY 有权
    对齐标记恢复与减少的地形

    公开(公告)号：US20140210113A1

    公开(公告)日：2014-07-31

    申请号：US13753792

    申请日：2013-01-30

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Dongsung Hong ,  Lijuan Zou ,  Daniel Sullivan ,  Lily Horng Youtt

    IPC: H01L23/544 ,  H01L21/308

    CPC classification number: H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: When opaque films are deposited on semi-conductor wafers, underlying alignment marks may be concealed. The re-exposure of such alignment marks is one source of resulting surface topography. In accordance with one implementation, alignment marks embedded in a wafer may be exposed by removing material from one or more layers and by replacing such material with a transparent material. In accordance with another implementation, the amount of material removed in an alignment mark recovery process may be mitigated by selectively ashing or etching above a stop layer.

    Abstract translation: 当不透明膜沉积在半导体晶片上时，潜在的对准标记可能被隐藏。 这种对准标记的再曝光是所得表面形貌的一个来源。 根据一个实施方案，嵌入在晶片中的对准标记可以通过从一个或多个层去除材料并且用透明材料代替这样的材料来暴露。 根据另一实施方式，可以通过在停止层上方选择性灰化或蚀刻来减轻在对准标记恢复过程中去除的材料的量。

    Recessed hardmask used to form heat-assisted magnetic recording near-field transducer with heat sink
    9.
    发明授权
    Recessed hardmask used to form heat-assisted magnetic recording near-field transducer with heat sink 有权

    公开(公告)号：US11456008B2

    公开(公告)日：2022-09-27

    申请号：US16291465

    申请日：2019-03-04

    Applicant: Seagate Technology LLC

    Inventor： Anusha Natarajarathinam ,  Yongjun Zhao ,  Hui Brickner ,  Dongsung Hong

    IPC: G11B5/127 ,  G11B5/105 ,  G11B5/31 ,  G11B5/40 ,  G11B5/00

    Abstract: A method involves depositing a near-field transducer on a substrate of a slider. The near-field transducer comprises a plate-like enlarged portion and a peg portion. A first hard stop extending from the near field transducer and an air bearing surface is formed. A heat sink is formed on the enlarged portion and the first hard stop. A dielectric material is deposited over the near-field transducer and the heat sink. A second hard stop is deposited on the dielectric material away from the air bearing surface. The second hard stop comprises a recess corresponding in size and location to the heat sink. The method involves milling at an oblique angle to the substrate between the first hard stop and second hard stop to cut through the heat sink at the angle. The recess of the second hard stop increases a milling rate over the heat sink compared to a second milling rate of the dielectric away from the heat sink.

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