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12 条记录 (耗时 0.015 秒)

    ALIGNMENT MARK RECOVERY WITH REDUCED TOPOGRAPHY
    4.
    发明申请
    ALIGNMENT MARK RECOVERY WITH REDUCED TOPOGRAPHY 有权
    对齐标记恢复与减少的地形

    公开(公告)号：US20140210113A1

    公开(公告)日：2014-07-31

    申请号：US13753792

    申请日：2013-01-30

    申请人： SEAGATE TECHNOLOGY LLC

    发明人： Dongsung Hong ,  Lijuan Zou ,  Daniel Sullivan ,  Lily Horng Youtt

    IPC分类号： H01L23/544 ,  H01L21/308

    CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    摘要： When opaque films are deposited on semi-conductor wafers, underlying alignment marks may be concealed. The re-exposure of such alignment marks is one source of resulting surface topography. In accordance with one implementation, alignment marks embedded in a wafer may be exposed by removing material from one or more layers and by replacing such material with a transparent material. In accordance with another implementation, the amount of material removed in an alignment mark recovery process may be mitigated by selectively ashing or etching above a stop layer.

    摘要翻译： 当不透明膜沉积在半导体晶片上时，潜在的对准标记可能被隐藏。 这种对准标记的再曝光是所得表面形貌的一个来源。 根据一个实施方案，嵌入在晶片中的对准标记可以通过从一个或多个层去除材料并且用透明材料代替这样的材料来暴露。 根据另一实施方式，可以通过在停止层上方选择性灰化或蚀刻来减轻在对准标记恢复过程中去除的材料的量。

    METHODS OF MAKING A NEAR FIELD TRANSDUCER WITH A FLARE PEG
    7.
    发明申请
    METHODS OF MAKING A NEAR FIELD TRANSDUCER WITH A FLARE PEG 有权
    使用FLARE PEG制造近场传感器的方法

    公开(公告)号：US20140251948A1

    公开(公告)日：2014-09-11

    申请号：US13789252

    申请日：2013-03-07

    申请人： SEAGATE TECHNOLOGY LLC

    发明人： Yongjun Zhao ,  Dongsung Hong ,  Lijuan Zou ,  Mark Ostrowski

    IPC分类号： G11B5/127

    CPC分类号： G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021

    摘要： The disclosed methods enable the production of plasmonic near-field transducers that are useful in heat-assisted magnetic recording. The plasmonic near-field transducers have an enlarged region and a peg region. The peg region includes a peg region in proximity to an air-bearing surface above a recording medium and also includes a flared region between and in contact with the enlarged region and the peg region. The flared region can act as a heat sink and can lower the thermal resistance of the peg portion of the near-field transducer, thus reducing its temperature.

    摘要翻译： 所公开的方法使得能够生产在热辅助磁记录中有用的等离子体激元近场换能器。 等离子体激元近场换能器具有扩大的区域和钉区域。 钉区域包括靠近记录介质上方的空气轴承表面的钉区域，并且还包括在扩大区域和钉区域之间并与其接触的扩口区域。 扩口区域可以用作散热器，并且可以降低近场换能器的钉部分的热阻，从而降低其温度。

    ETCH STOP CONFIGURATION
    9.
    发明申请
    ETCH STOP CONFIGURATION 有权
    ETCH停止配置

    公开(公告)号：US20140254339A1

    公开(公告)日：2014-09-11

    申请号：US13794133

    申请日：2013-03-11

    申请人： Seagate Technology LLC

    发明人： Yongjun Zhao ,  Lien Lee ,  Lijuan Zou ,  Mark Henry Ostrowski

    IPC分类号： G11B13/08

    CPC分类号： G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A method of making a transducer head disclosed herein includes depositing a spacer layer on an NFT layer of the transducer head, forming an etch stop layer on a spacer layer of a transducer, depositing a cladding layer on the etch stop layer, and milling the cladding layer at a sloped angle such that the milling stops at the etch stop layer.

    摘要翻译： 制造本文公开的换能器头的方法包括在换能器头的NFT层上沉积间隔层，在换能器的间隔层上形成蚀刻停止层，在蚀刻停止层上沉积包覆层，以及研磨包层 层，其倾斜角度使得铣削在蚀刻停止层处停止。

    Alignment mark recovery with reduced topography
    10.
    发明授权
    Alignment mark recovery with reduced topography 有权
    对齐标记恢复与减少的地形

    公开(公告)号：US09385089B2

    公开(公告)日：2016-07-05

    申请号：US13753792

    申请日：2013-01-30

    申请人： Seagate Technology LLC

    发明人： Dongsung Hong ,  Lijuan Zou ,  Daniel Sullivan ,  Lily Horng Youtt

    IPC分类号： H01L21/76 ,  H01L21/46 ,  H01L23/544

    CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    摘要： When opaque films are deposited on semi-conductor wafers, underlying alignment marks may be concealed. The re-exposure of such alignment marks is one source of resulting surface topography. In accordance with one implementation, alignment marks embedded in a wafer may be exposed by removing material from one or more layers and by replacing such material with a transparent material. In accordance with another implementation, the amount of material removed in an alignment mark recovery process may be mitigated by selectively ashing or etching above a stop layer.

    摘要翻译： 当不透明膜沉积在半导体晶片上时，潜在的对准标记可能被隐藏。 这种对准标记的再曝光是所得表面形貌的一个来源。 根据一个实施方案，嵌入在晶片中的对准标记可以通过从一个或多个层去除材料并且用透明材料代替这样的材料来暴露。 根据另一实施方式，可以通过选择性地在停止层上方进行灰化或蚀刻来减轻在对准标记恢复过程中去除的材料的量。