Elevation chair
    1.
    发明授权
    Elevation chair 失效
    高空椅

    公开(公告)号:US06783179B2

    公开(公告)日:2004-08-31

    申请号:US10180343

    申请日:2002-06-27

    IPC分类号: A47C102

    摘要: An elevation chair having a seat which is elevated by a driving mechanism, provided with a seat frame and a seat main body attached to the frame as to incline forward, the seat main body has an oscillation mechanism to automatically incline the seat main body forward at a predetermined height, and an angle detecting means to stop the driving mechanism when the seat main body reaches a predetermined inclination angle. And, the elevation chair has an automatic braking mechanism which releases wheels when a footrest attached to a position above a front wheel is laid to be horizontal, and brakes the wheel when the footrest is standing.

    摘要翻译: 一种升降椅,其具有由驱动机构提升的座椅,设置有座椅框架和安装在框架上以向前倾斜的座椅主体,座椅主体具有振动机构,以使座椅主体自动地向前倾斜 以及角度检测装置,用于当座椅主体达到预定倾斜角度时停止驱动机构。 而且,升降椅具有自动制动机构,当安装在前轮上方的脚踏板被放置成水平时,释放车轮,并且当搁脚板站立时制动车轮。

    SEALING FILM FOR ORGANIC EL ELEMENT, ORGANIC EL ELEMENT, AND ORGANIC EL DISPLAY
    2.
    发明申请
    SEALING FILM FOR ORGANIC EL ELEMENT, ORGANIC EL ELEMENT, AND ORGANIC EL DISPLAY 有权
    有机EL元件,有机EL元件和有机EL显示器的密封膜

    公开(公告)号:US20120104945A1

    公开(公告)日:2012-05-03

    申请号:US12999537

    申请日:2009-06-29

    申请人: Kazuya Adachi

    发明人: Kazuya Adachi

    IPC分类号: H05B33/04 B32B7/02

    CPC分类号: H01L51/5256 Y10T428/24975

    摘要: An object of this invention is to provide a sealing film for an organic EL element having excellent moisture resistance, due to the absence of pinholes. A sealing film of this invention is a sealing film for an organic EL element having a layered structure of at least three layers with a silicon nitride film and a silicon oxynitride film layered in alternation, and is characterized in that odd-numbered layers from the side of the organic EL element are silicon nitride films having a film thickness (T1) of 200 nm or greater, and even-numbered layers from the side of the organic EL element are silicon oxynitride films having a film thickness (T2) of 20 nm or greater and 50 nm or less.

    摘要翻译: 本发明的目的是提供一种由于没有针孔而具有优异的耐湿性的有机EL元件用密封膜。 本发明的密封膜是一种有机EL元件的密封膜,其具有至少三层的叠层结构,其中氮化硅膜和氮氧化硅膜交替层叠,其特征在于,从侧面开始奇数层 有机EL元件的膜厚(T1)为200nm以上的氮化硅膜,从有机EL元件侧的偶数层是氧化硅膜,其膜厚(T2)为20nm,或 大于或等于50nm。

    Photoconductor for electrophotography and method of manufacturing and
using a photoconductor
    3.
    发明授权
    Photoconductor for electrophotography and method of manufacturing and using a photoconductor 失效
    用于电子照相的感光体以及制造和使用光电导体的方法

    公开(公告)号:US6124072A

    公开(公告)日:2000-09-26

    申请号:US442825

    申请日:1999-11-18

    IPC分类号: G03G5/05 G03G5/08 G03G5/082

    CPC分类号: G03G5/08207

    摘要: There is disclosed a photoconductor for use in an electrophotographic apparatus. The photoconductor includes a conductive substrate and a photoconductive layer formed on the conductive substrate. The photoconductive layer includes an As.sub.2 Se.sub.3 alloy containing 36% to 40% by weight of As and doped with 1,000 to 20,000 parts per million of iodine. A method of manufacturing a photoconductor is also disclosed, which includes forming a photoconductive layer by vapor deposition on a conductive substrate and thermally treating the photoconductive layer at a temperature between 100 and 200 degrees Celsius for a period between 30 and 80 minutes. Advantageously, the photoconductor of the present invention is able to provide high quality images at high printing speeds.

    摘要翻译: 公开了用于电子照相设备中的光电导体。 光电导体包括导电衬底和形成在导电衬底上的光电导层。 光电导层包括含有36重量%至40重量%的As并掺杂有1,000至20,000份/百万份碘的As 2 Se 3合金。 还公开了一种制造光电导体的方法,其包括通过气相沉积在导电基底上形成光电导层并在100至200摄氏度的温度下热处理光电导层30至80分钟。 有利地,本发明的光电导体能够以高打印速度提供高质量的图像。

    Photoreceptor for electrophotography
    4.
    发明授权
    Photoreceptor for electrophotography 失效
    电子照相感光体

    公开(公告)号:US5381212A

    公开(公告)日:1995-01-10

    申请号:US88874

    申请日:1993-07-08

    摘要: A photoreceptor having a marking area whose optical reflection property differs from that of a non-marking area is formed in a portion of a surface of an electrically conductive substrate. The average line of a vertical section of the non-marking area cut across the border line with the marking area is M.sub.0 and the average line of a vertical section of the marking area cut across the border line is N.sub.0 and that straight lines touching the average lines M.sub.0 and N.sub.0 at the intersection of M.sub.0 and N.sub.0 are tangent lines M.sub.1 and N.sub.1, respectively, the acute angle .theta. between M.sub.1 and N.sub.1 is within the range of 0.degree..ltoreq..theta..ltoreq.30.degree.. Setting the angle .theta. within this range enables a photoconductive layer of a uniform characteristic to be laminated on the electrically conductive substrate even when the marking area is formed on the surface of the substrate. With this arrangement, since information for optimizing the image quality of copies is obtained from the same location of a photoreceptor drum with reference to the marking area, a photoreceptor for electrophotography always produces copies of stable image quality.

    摘要翻译: 在导电性基板的表面的一部分形成有具有与非标记区域的光学反射特性不同的标记区域的感光体。 跨越与标记区域的边界线切割的非标记区域的垂直部分的平均线为M0,并且跨越边界线切割的标记区域的垂直截面的平均线为N0,并且直线接触平均值 M0和N0交点处的线M0和N0分别是切线M1和N1,M1和N1之间的锐角θ在0°<30°的范围内。 将角度θ设定在该范围内,即使在基板的表面上形成标记区域,也能够将均匀特性的光电导层层叠在导电性基板上。 利用这种布置,由于从相对于标记区域的感光鼓的相同位置获得用于优化拷贝的图像质量的信息,所以用于电子照相的感光体总是产生稳定图像质量的副本。

    Organic EL device
    5.
    发明授权
    Organic EL device 有权
    有机EL器件

    公开(公告)号:US08410691B2

    公开(公告)日:2013-04-02

    申请号:US13058332

    申请日:2009-09-29

    申请人: Kazuya Adachi

    发明人: Kazuya Adachi

    IPC分类号: H01L51/54

    CPC分类号: H05B33/04 H01L51/5253

    摘要: An organic EL device includes a substrate; an organic EL element formed on the substrate; and a sealing film formed on the organic EL element that is a CVD-deposited silicon nitride film containing from 0.85 at % to 0.95 at % H. A method of manufacturing the organic EL device includes the steps of: forming an organic EL element on a substrate; and forming a sealing film on the organic EL element in a process including mixing SiH4, NH3, N2, and H2, during which the H2 is introduced at a flow rate set to from 1 volume percent to 5 volume percent of that of the N2, so that a silicon nitride film containing hydrogen atoms or hydrogen molecules is formed.

    摘要翻译: 有机EL器件包括衬底; 形成在所述基板上的有机EL元件; 以及形成在有机EL元件上的密封膜,该有机EL元件是含有0.85原子%至0.95原子%H的CVD沉积氮化硅膜。制造有机EL器件的方法包括以下步骤:在有机EL元件上形成有机EL元件 基质; 以及在包括混合SiH 4,NH 3,N 2和H 2的过程中在所述有机EL元件上形成密封膜,在所述工艺中,所述H 2以设定为N 2的1体积%至5体积%的流量被引入, 从而形成含有氢原子或氢分子的氮化硅膜。

    Sealing film for organic EL element, organic EL element, and organic EL display
    6.
    发明授权
    Sealing film for organic EL element, organic EL element, and organic EL display 有权
    有机EL元件用密封膜,有机EL元件和有机EL显示器

    公开(公告)号:US08319428B2

    公开(公告)日:2012-11-27

    申请号:US12999537

    申请日:2009-06-29

    申请人: Kazuya Adachi

    发明人: Kazuya Adachi

    IPC分类号: H01L51/50

    CPC分类号: H01L51/5256 Y10T428/24975

    摘要: An object of this invention is to provide a sealing film for an organic EL element having excellent moisture resistance, due to the absence of pinholes. A sealing film of this invention is a sealing film for an organic EL element having a layered structure of at least three layers with a silicon nitride film and a silicon oxynitride film layered in alternation, and is characterized in that odd-numbered layers from the side of the organic EL element are silicon nitride films having a film thickness (T1) of 200 nm or greater, and even-numbered layers from the side of the organic EL element are silicon oxynitride films having a film thickness (T2) of 20 nm or greater and 50 nm or less.

    摘要翻译: 本发明的目的是提供一种由于没有针孔而具有优异的耐湿性的有机EL元件用密封膜。 本发明的密封膜是一种有机EL元件的密封膜,其具有至少三层的叠层结构,其中氮化硅膜和氮氧化硅膜交替层叠,其特征在于,从侧面开始奇数层 有机EL元件的膜厚(T1)为200nm以上的氮化硅膜,从有机EL元件侧的偶数层是氧化硅膜,其膜厚(T2)为20nm, 大于或等于50nm。

    ORGANIC EL DEVICE AND PROCESS FOR MANUFACTURING SAME
    7.
    发明申请
    ORGANIC EL DEVICE AND PROCESS FOR MANUFACTURING SAME 有权
    有机EL器件及其制造方法

    公开(公告)号:US20110186822A1

    公开(公告)日:2011-08-04

    申请号:US13003674

    申请日:2009-04-06

    申请人: Kazuya Adachi

    发明人: Kazuya Adachi

    IPC分类号: H01L51/52 H01L51/56

    摘要: Provided is an organic EL device capable of maintaining an excellent luminous efficiency over an extended period of time, particularly in a top emission-type EL device. The organic EL device of the invention includes a substrate and an organic EL element formed on the substrate. The organic EL element is composed of a bottom electrode, an organic EL layer, a top electrode and a protective layer. The protective layer is composed of one or a plurality of inorganic films, and at least one of the one or plurality of inorganic films is an SiON:H film having stretching-mode peak area ratios, as determined by infrared absorption spectroscopy, that include an absorption area ratio of N—H bonds to Si—N bonds in the SiON:H film which is not less than 0.04 but not more than 0.07 and an absorption area ratio of Si—H bonds to Si—N bonds which is not more than 0.15.

    摘要翻译: 提供了能够在长时间内保持优异的发光效率的有机EL器件,特别是在顶部发光型EL器件中。 本发明的有机EL元件包括在基板上形成的基板和有机EL元件。 有机EL元件由底部电极,有机EL层,顶部电极和保护层构成。 保护层由一个或多个无机膜组成,并且一个或多个无机膜中的至少一个是具有通过红外吸收光谱测定的拉伸模式峰面积比的SiON:H膜,其包括 在SiON:H膜中N-H键与Si-N键的吸收面积比不小于0.04但不大于0.07,Si-H键与Si-N键的吸收面积比不大于 0.15。

    Organic EL device and process for manufacturing same
    8.
    发明授权
    Organic EL device and process for manufacturing same 有权
    有机EL器件及其制造方法

    公开(公告)号:US08492751B2

    公开(公告)日:2013-07-23

    申请号:US13003674

    申请日:2009-04-06

    申请人: Kazuya Adachi

    发明人: Kazuya Adachi

    IPC分类号: H01L35/24

    摘要: Provided is an organic EL device capable of maintaining an excellent luminous efficiency over an extended period of time, particularly in a top emission-type EL device. The organic EL device of the invention includes a substrate and an organic EL element formed on the substrate. The organic EL element is composed of a bottom electrode, an organic EL layer, a top electrode and a protective layer. The protective layer is composed of one or a plurality of inorganic films, and at least one of the one or plurality of inorganic films is an SiON:H film having stretching-mode peak area ratios, as determined by infrared absorption spectroscopy, that include an absorption area ratio of N—H bonds to Si—N bonds in the SiON:H film which is not less than 0.04 but not more than 0.07 and an absorption area ratio of Si—H bonds to Si—N bonds which is not more than 0.15.

    摘要翻译: 提供一种能够在长时间内保持优异的发光效率的有机EL器件,特别是在顶部发光型EL器件中。 本发明的有机EL元件包括在基板上形成的基板和有机EL元件。 有机EL元件由底部电极,有机EL层,顶部电极和保护层构成。 保护层由一个或多个无机膜组成,并且一个或多个无机膜中的至少一个是具有通过红外吸收光谱测定的拉伸模式峰面积比的SiON:H膜,其包括 在SiON:H膜中NH键与Si-N键的吸收面积比不小于0.04但不大于0.07,Si-H键与Si-N键的吸收面积比不大于0.15。

    ORGANIC EL DEVICE
    9.
    发明申请
    ORGANIC EL DEVICE 有权
    有机EL设备

    公开(公告)号:US20120194061A1

    公开(公告)日:2012-08-02

    申请号:US13058332

    申请日:2009-09-29

    申请人: Kazuya Adachi

    发明人: Kazuya Adachi

    IPC分类号: H05B33/12 H05B33/10

    CPC分类号: H05B33/04 H01L51/5253

    摘要: An organic EL device includes a substrate; an organic EL element formed on the substrate; and a sealing film formed on the organic EL element, wherein the sealing film is a silicon nitride film containing from 0.85 to 0.95 at % H. A method of manufacturing the organic EL device, includes the steps of: forming an organic EL element on a substrate; and forming a sealing film on the organic EL element in a process including mixing SiH4, NH3, N2, and H2, during which the H2 is introduced at a flow rate set to from 1 to 5 volume percent of that of the N2, so that a silicon nitride film containing hydrogen atoms or hydrogen molecules is formed.

    摘要翻译: 有机EL器件包括衬底; 形成在所述基板上的有机EL元件; 以及形成在所述有机EL元件上的密封膜,其中所述密封膜是含有0.85至0.95at%H的氮化硅膜。制造所述有机EL器件的方法包括以下步骤:在有机EL元件上形成有机EL元件 基质; 在有机EL元件上形成密封膜,该方法包括混合SiH 4,NH 3,N 2和H 2,在该过程中,H 2以设定为N 2的1至5体积%的流量引入,使得 形成含有氢原子或氢分子的氮化硅膜。

    Photoconductor for electrophotography and method of manufacturing and
using a photoconductor

    公开(公告)号:US6110631A

    公开(公告)日:2000-08-29

    申请号:US078673

    申请日:1998-05-14

    CPC分类号: G03G5/08207

    摘要: There is disclosed a photoconductor for use in an electrophotographic apparatus. The photoconductor includes a conductive substrate and a photoconductive layer formed on the conductive substrate. The photoconductive layer includes an As.sub.2 Se.sub.3 alloy containing 36% to 40% by weight of As and doped with 1,000 to 20,000 parts per million of iodine. A method of manufacturing a photoconductor is also disclosed, which includes forming a photoconductive layer by vapor deposition on a conductive substrate and thermally treating the photoconductive layer at a temperature between 100 and 200 degrees Celsius for a period between 30 and 80 minutes. Advantageously, the photoconductor of the present invention is able to provide high quality images at high printing speeds.