Semiconductor wafer and manufacturing method of semiconductor device
    5.
    发明申请
    Semiconductor wafer and manufacturing method of semiconductor device 审中-公开
    半导体晶圆及半导体器件的制造方法

    公开(公告)号:US20080211063A1

    公开(公告)日:2008-09-04

    申请号:US12071927

    申请日:2008-02-28

    IPC分类号: H01L23/544 H01L21/20

    摘要: A semiconductor wafer includes a semiconductor substrate, a semiconductor layer, and an oxide layer. The semiconductor layer is disposed on a surface of the semiconductor substrate and has a crystal structure similar to a crystal structure of the semiconductor substrate. The semiconductor layer includes an element section and a scribe section. The scribe section is disposed to divide the element section into a plurality of portions and is configurated to be used as a cutting allowance for dicing. Each of the portions includes a column structure in which columns having different conductivity types are arranged alternately. The oxide layer is disposed on a surface of the scribe section to be exposed to an outside of the semiconductor device.

    摘要翻译: 半导体晶片包括半导体衬底,半导体层和氧化物层。 半导体层设置在半导体衬底的表面上,具有与半导体衬底的晶体结构类似的晶体结构。 半导体层包括元件部分和划线部分。 划片部分设置成将元件部分分成多个部分,并且被配置为用作切割的切割余量。 这些部分中的每一个都包括具有不同导电类型的列交替布置的列结构。 氧化物层设置在划线部分的表面上以暴露于半导体器件的外部。