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公开(公告)号：US20100316942A1
公开(公告)日：2010-12-16
申请号：US12813137
申请日：2010-06-10
IPC分类号： G03F1/00
摘要： A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.
摘要翻译： 光掩模由包括透明基板和由含过渡金属的硅基材料的上层和下层组成的遮光膜的光掩模坯料制造，上层中的O + N的含量高于下层的含量 层。 遮光膜通过氟干蚀刻通过抗蚀剂图案进行两步加工，使得膜的下部留下，并且含氧氯干蚀刻用于除去膜的其余部分。
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公开(公告)号：US20100291478A1
公开(公告)日：2010-11-18
申请号：US12779998
申请日：2010-05-14
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
摘要翻译： 本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到 硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法 蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻 已经进行。
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公开(公告)号：US20130059235A1
公开(公告)日：2013-03-07
申请号：US13590315
申请日：2012-08-21
摘要： In a photomask blank comprising a transparent substrate, an optical film of material containing a transition metal and silicon, and a hard mask film, the hard mask film is a multilayer film including a first layer of a chromium-based material containing 20-60 atom % of oxygen and a second layer of a chromium-based material containing at least 50 atom % of chromium and less than 20 atom % of oxygen. The hard mask film having a thickness of 2.0 nm to less than 10 nm is resistant to fluorine dry etching.
摘要翻译： 在包含透明基板的光掩模坯料，含有过渡金属和硅的材料的光学膜和硬掩模膜中，硬掩模膜是包括含有20-60个原子的铬基材料的第一层的多层膜 氧的百分比和含有至少50原子％的铬和小于20原子％的氧的铬基材料的第二层。 具有2.0nm至小于10nm厚度的硬掩模膜耐氟干蚀刻。
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