公开(公告)号：US11239125B2

公开(公告)日：2022-02-01

申请号：US16232735

申请日：2018-12-26

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Hsien-Lung Hsiao ,  Yu-Cheng Pai ,  Chia-Chi Lo ,  Szu-Hsien Chen ,  Shu-Chi Chang

IPC: H01L23/13 ,  H01L23/498 ,  H01L23/00 ,  H01L23/60

Abstract: A carrier structure includes: a plurality of substrates; a separation portion provided between the substrates; and a periphery portion provided at the periphery of the substrates and formed with at least one opening. With the configuration of the opening, the area of an insulating layer of the carrier structure can be reduced. Therefore, the overall space of electrostatic buildup in the carrier structure can also be reduced.

公开(公告)号：US20200035573A1

公开(公告)日：2020-01-30

申请号：US16232735

申请日：2018-12-26

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Hsien-Lung Hsiao ,  Yu-Cheng Pai ,  Chia-Chi Lo ,  Szu-Hsien Chen ,  Shu-Chi Chang

IPC: H01L23/13 ,  H01L23/498 ,  H01L23/00

Abstract: A carrier structure includes: a plurality of substrates; a separation portion provided between the substrates; and a periphery portion provided at the periphery of the substrates and formed with at least one opening. With the configuration of the opening, the area of an insulating layer of the carrier structure can be reduced. Therefore, the overall space of electrostatic buildup in the carrier structure can also be reduced.