公开(公告)号：US20190211446A1

公开(公告)日：2019-07-11

申请号：US16323962

申请日：2017-06-27

申请人： Singulus Technologies AG

发明人： Alexey IVANOV ,  Andreas KLEPL ,  Johannes RICHTER

IPC分类号： C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01J37/32

CPC分类号： C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/46 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32715 ,  H01J37/32724

摘要： A system and a corresponding method for simultaneous rotation and levitation of a substrate during deposition and/or etching of the substrate are disclosed. The system comprises a carrier located below the substrate, wherein the carrier comprises at least two gas inlets to provide gas to a bottom surface of the substrate to levitate the substrate above the carrier. The system further comprises at least one holding member connected to the carrier and being configured to restrict horizontal drifting of the substrate.

公开(公告)号：US20200283901A1

公开(公告)日：2020-09-10

申请号：US15779744

申请日：2016-11-30

申请人： SINGULUS TECHNOLOGIES AG

发明人： Alexey IVANOV ,  Johannes RICHTER

IPC分类号： C23C16/46 ,  C23C16/458

摘要： System and method for gas phase deposition of at least one material to a substrate having a first and a second surface opposite to the first surface. The system comprises a holding member configured to hold the substrate, a deposition member configured to apply the at least one material to the substrate from at least one direction and a heater located at a distance from the substrate and being configured to apply heat to the substrate from the side of the first surface and from the side of the second surface of the substrate.

公开(公告)号：US20190177851A1

公开(公告)日：2019-06-13

申请号：US16323731

申请日：2017-06-27

申请人： Singulus Technologies AG

发明人： Alexey IVANOV ,  Andreas KLEPL ,  Johannes RICHTER

IPC分类号： C23C16/52 ,  C23C16/458 ,  C23C16/455 ,  C23C16/46

摘要： A system for gas phase deposition comprises a gas injector configured to process gases to a substrate for gas phase deposition onto the substrate. The gas injector comprises a first flow path and a second flow path different from the first flow path. The system comprises a first temperature adjustment mechanism associated with the first flow path to control a temperature of a process gas passing through the first flow path. The system comprises a second temperature adjustment mechanism associated with at least the second flow path to control a temperature of a process gas passing through the second flow path. The first temperature adjustment mechanism and the second temperature adjustment mechanism are operable independently of each other. The system is configured to cause rotation and levitation of the substrate during etching of the substrate and/or deposition.