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公开(公告)号：US20080271274A1
公开(公告)日：2008-11-06
申请号：US11912126
申请日：2005-04-20
IPC分类号： H01L21/00
CPC分类号： H01L21/67046
摘要： Silicon wafers and the like are cleaned using new scrubber-type apparatus in which measures are taken to compensate for differential cleaning of the central region of the wafer by: using rotary brushes having one or more non-contact portions arranged in the section thereof that faces the central region of the substrate, or toggling the relative position of the wafer and the rotary brushes, or directing cleaning fluid(s) preferentially towards the central region of the wafer. Another aspect of the invention provides scrubber-type cleaning apparatus in which the rotary brushes are replaced by rollers (110). A web of cleaning material (116) is interposed between each roller and the substrate. Various different webs of cleaning material may be used, e.g. a length of tissue, a continuous loop of cleaning material whose surface is reconditioned on each cleaning pass, adhesive material provided on a carrier tape, etc.
摘要翻译： 使用新的洗涤器型装置清洁硅晶片等，其中采取措施来补偿晶片的中心区域的差别清洁：使用具有一个或多个非接触部分的旋转电刷， 或者切换晶片和旋转刷的相对位置，或者将清洁流体优先地引向晶片的中心区域。 本发明的另一方面提供了一种洗涤器型清洁装置，其中旋转刷由辊（110）代替。 清洁材料网（116）插入在每个辊和基底之间。 可以使用各种不同的清洁材料网，例如。 组织长度，每个清洁通道上表面被修复的清洁材料的连续回路，设置在载带上的粘合材料等。
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2.发明授权公开(公告)号：US07188630B2
公开(公告)日：2007-03-13
申请号：US10431053
申请日：2003-05-07
申请人： John C. Flake , Kevin E. Cooper , Saifi Usmani
发明人： John C. Flake , Kevin E. Cooper , Saifi Usmani
CPC分类号： C11D3/28 , C11D1/146 , C11D1/345 , C11D1/62 , C11D1/72 , C11D3/0073 , C11D3/2003 , C11D3/382 , C11D3/43 , C11D11/0047 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The solution can be applied during a CMP process or during a post CMP cleaning process. The solution may include a surfactant and a corrosion inhibitor. In one embodiment, the concentration of the surfactant in the solution is less than approximately one percent by weight and the concentration of the corrosion inhibitor in the solution is less than approximately one percent by weight. The solution may also include a solvent and a cosolvent. In an alternate embodiment, the solution includes a solvent and a cosolvent without the surfactant and corrosion inhibitor. In one embodiment, the CMP process and post CMP cleaning process can be performed in the presence of light having a wavelength of less than approximately one micron.
摘要翻译： 公开了一种处理半导体晶片的方法。 将解决方案应用于半导体晶片以防止金属互连表面处的枝晶和电解反应。 该解决方案可以在CMP过程中或CMP后清洗过程中应用。 溶液可以包括表面活性剂和腐蚀抑制剂。 在一个实施方案中，溶液中表面活性剂的浓度小于约1重量％，并且溶液中腐蚀抑制剂的浓度小于约1重量％。 溶液还可以包括溶剂和助溶剂。 在另一个实施方案中，溶液包括溶剂和没有表面活性剂和腐蚀抑制剂的助溶剂。 在一个实施例中，可以在具有小于约一微米的波长的光的存在下执行CMP工艺和后CMP清洁工艺。
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公开(公告)号：US07387970B2
公开(公告)日：2008-06-17
申请号：US10430987
申请日：2003-05-07
IPC分类号： H01L21/304 , H01L21/306 , C23F1/14
CPC分类号： C09G1/02 , B24B37/24 , C09K3/1463 , H01L21/30625
摘要： A method for processing semiconductor wafers is disclosed. A semiconductor wafer is provided to a semiconductor processing stage where a block copolymer surfactant (BCS) is applied to the wafer surface. In one embodiment, the BCS includes a hydrophobic portion and a hydrophilic portion. Alternatively, the BCS may be a silicone-containing BCS. In one embodiment, the BCS is within an aqueous solution where the concentration of the BCS within the aqueous solution is less than one percent by weight. Also disclosed is an aqueous solution including abrasive particles and a BCS having a hydrophobic portion and a hydrophilic portion. The abrasive particles may include silica, alumina, or ceria.
摘要翻译： 公开了一种处理半导体晶片的方法。 半导体晶片被提供到半导体处理阶段，其中将嵌段共聚物表面活性剂（BCS）施加到晶片表面。 在一个实施方案中，BCS包括疏水部分和亲水部分。 或者，BCS可以是含硅氧烷的BCS。 在一个实施方案中，BCS在水溶液中，其中水溶液中BCS的浓度小于1重量％。 还公开了包含研磨颗粒和具有疏水部分和亲水部分的BCS的水溶液。 研磨颗粒可以包括二氧化硅，氧化铝或二氧化铈。
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4.发明授权公开(公告)号：US07579279B2
公开(公告)日：2009-08-25
申请号：US11670176
申请日：2007-02-01
申请人： John C. Flake , Kevin E. Cooper , Saifi Usmani
发明人： John C. Flake , Kevin E. Cooper , Saifi Usmani
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C11D3/28 , C11D1/146 , C11D1/345 , C11D1/62 , C11D1/72 , C11D3/0073 , C11D3/2003 , C11D3/382 , C11D3/43 , C11D11/0047 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The solution can be applied during a CMP process or during a post CMP cleaning process. The solution may include a surfactant and a corrosion inhibitor. In one embodiment, the concentration of the surfactant in the solution is less than approximately one percent by weight and the concentration of the corrosion inhibitor in the solution is less than approximately one percent by weight. The solution may also include a solvent and a cosolvent. In an alternate embodiment, the solution includes a solvent and a cosolvent without the surfactant and corrosion inhibitor. In one embodiment, the CMP process and post CMP cleaning process can be performed in the presence of light having a wavelength of less than approximately one micron.
摘要翻译： 公开了一种处理半导体晶片的方法。 将解决方案应用于半导体晶片以防止金属互连表面处的枝晶和电解反应。 该解决方案可以在CMP过程中或CMP后清洗过程中应用。 溶液可以包括表面活性剂和腐蚀抑制剂。 在一个实施方案中，溶液中表面活性剂的浓度小于约1重量％，并且溶液中腐蚀抑制剂的浓度小于约1重量％。 溶液还可以包括溶剂和助溶剂。 在另一个实施方案中，溶液包括溶剂和没有表面活性剂和腐蚀抑制剂的助溶剂。 在一个实施例中，可以在具有小于约一微米的波长的光的存在下执行CMP工艺和后CMP清洁工艺。
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