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公开(公告)号:US20100126137A1
公开(公告)日:2010-05-27
申请号:US12523604
申请日:2008-01-16
Applicant: Stellan Hamrin
Inventor: Stellan Hamrin
CPC classification number: F23C9/00 , B01D53/22 , B01D63/00 , B01D2313/22 , F02C3/22 , F02C6/18 , F23C2900/09001 , F23L7/007 , F23L2900/07001 , Y02E20/322 , Y02E20/344
Abstract: A combustion installation including a combustion device with a combustion space for combustion of a fuel and an oxygen-containing gas to a combustion gas in the combustion space and a membrane device is described. The membrane device is arranged for the flow of air, past a membrane in a second compartment of the membrane device, to be in the same direction as the flow of combustion gases, past the membrane in a first compartment of the membrane device.
Abstract translation: 描述了一种燃烧装置,其包括具有用于将燃料和含氧气体燃烧到燃烧空间中的燃烧气体的燃烧空间的燃烧装置和膜装置。 膜装置被布置成用于通过薄膜装置的第二隔室中的膜的空气流沿着与燃烧气体流相同的方向通过膜装置的第一隔室中的膜。
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公开(公告)号:US20100031859A1
公开(公告)日:2010-02-11
申请号:US12085398
申请日:2006-11-23
Applicant: Tor Bruun , Stellan Hamrin
Inventor: Tor Bruun , Stellan Hamrin
CPC classification number: F23C9/00 , B01D53/22 , B01D2257/104 , F02C3/20 , F02C3/32 , F02C3/34 , F23C13/00 , F23C2900/09002 , F23C2900/13002 , F23L7/007 , F23L2900/07001 , Y02E20/322 , Y02E20/344
Abstract: A combustion installation comprising a combustion device for combustion of a fuel and an oxygen-containing gas to a combustion gas and a method for such combustion is described. A nozzle means is arranged for injection of the fuel into the combustion device and a membrane device for supplying oxygen to the combustion gases for production of the oxygen-containing gas, wherein the combustion device comprises at least a first inlet for the oxygen-containing gas and an outlet for the combustion gases. The combustion installation comprises at least a first ejector including the nozzle means and the first inlet, wherein the nozzle means and the first inlet are arranged to drive the flow of oxygen containing gas and fuel through the combustion device.
Abstract translation: 描述了包括用于燃烧燃料和含氧气体到燃烧气体的燃烧装置的燃烧装置和这种燃烧的方法。 喷嘴装置被布置成用于将燃料喷射到燃烧装置中,以及用于向燃烧气体供应氧气用于生产含氧气体的膜装置,其中燃烧装置至少包括用于含氧气体的第一入口 和燃烧气体的出口。 燃烧装置至少包括第一喷射器,其包括喷嘴装置和第一入口,其中喷嘴装置和第一入口布置成驱动含氧气体和燃料的流动通过燃烧装置。
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公开(公告)号:US20130119667A1
公开(公告)日:2013-05-16
申请号:US13811753
申请日:2011-07-22
Applicant: Tor Christensen , Knut Børseth , Stellan Hamrin , Hermann De Meyer
Inventor: Tor Christensen , Knut Børseth , Stellan Hamrin , Hermann De Meyer
CPC classification number: F01N3/0807 , B01D53/1475 , B01D53/62 , B01D53/75 , B01D2251/306 , B01D2257/104 , B01D2257/404 , F01K23/10 , F02C6/18 , F05D2260/61 , F23J15/00 , F23J15/04 , F23J15/06 , F23J2215/50 , F23J2219/40 , H02K7/1823 , Y02A50/2342 , Y02C10/04 , Y02C10/06 , Y02E20/16 , Y02E20/326 , Y02E20/363
Abstract: A method for producing electrical power and capture CO2, where gaseous fuel and an oxygen containing gas are introduced into a gas turbine to produce electrical power and an exhaust gas, where the exhaust gas withdrawn from the gas turbine is cooled by production of steam in a boiler (20), and where cooled exhaust gas is introduced into a CO2 capture plant for capturing CO2 from the cooled exhaust gas leaving the boiler (20) by an absorption/desorption process, before the treated CO2 lean exhaust gas is released into the surroundings and the captured CO2 is exported from the plant, where the exhaust gas leaving the gas turbine has a pressure of 3 to 15 bara, and the exhaust gas is expanded to atmospheric pressure after leaving the CO2 capture plant. A plant for carrying out the method is also described.
Abstract translation: 一种用于产生电力并捕获CO 2的方法,其中将气体燃料和含氧气体引入燃气轮机中以产生电力和废气,其中从燃气轮机排出的废气通过在 锅炉(20),并且其中将冷却的废气引入CO 2捕获设备中,以在被处理的CO 2贫废气被释放到周围环境之前通过吸收/解吸过程从经过锅炉(20)的冷却废气中捕获CO 2 捕获的二氧化碳从工厂出口,离开燃气轮机的废气的压力为3〜15巴,废气在离开二氧化碳捕集装置后膨胀至大气压。 还描述了用于实施该方法的设备。
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公开(公告)号:US20060230762A1
公开(公告)日:2006-10-19
申请号:US10542340
申请日:2004-01-19
Applicant: Stellan Hamrin
Inventor: Stellan Hamrin
IPC: F02C1/04
CPC classification number: F02C7/141 , B01D53/22 , F02C9/18 , F05D2270/303 , F23L2900/07001 , Y02E20/322 , Y02T50/675
Abstract: A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 μm.
Abstract translation: 在SiC衬底上制造与衬底相同的多型式的SiC同质外延层的方法。 这些层在SiC衬底的表面上生长,其中表面相对于(0001)基面以高于0.1度但小于1度的角度倾斜。 通过形成厚度达1μm的边界层开始同质外延生长。
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