摘要:
An apparatus and method for measuring instantaneous power using a magneto-optic Kerr effect sensor are disclosed. The apparatus comprises and the method requires a magneto-optic Kerr effect magnetic field sensing element and an optical system including a light source, first and second polarizers, and a photoconductive detector. In a preferred embodiment, the sensing element and the optical system are arranged to sense the intensity of a magnetic field generated by current passing through a high voltage power line so as to provide an optical signal that is representative of the current to the photoconductive detector. A voltage signal is tapped off of the high voltage power line to provide a bias signal to the photoconductive detector. The photoconductive detector thereby effectively multiplies the optical current signal with the voltage signal so as to provide a photoconductive detector current signal that is proportional to instantaneous power passing through the high voltage power line.
摘要:
A sensor system including a magnetooptic sensing element, a light source, at least one polarizer and at least one detector disposed about the sensing element. The sensing element has a first characteristic such that the sensing element provides a response to an applied external stress.
摘要:
A sensor system includes a magneto-optic Kerr effect magnetic field sensing element and an optical system including a light source, at least one polarizer or polarizing element and a detector disposed about the sensing element. The sensing element is responsive to an external magnetic field. In one embodiment, the optical system and sensing element can be arranged to measure the strength of a magnetic field. In another embodiment the optical system and sensing element can be arranged to measure the rotational speed of rotating members.
摘要:
A sensor system includes a magneto-optic Kerr effect magnetic field sensing element and an optical system including a light source, at least one polarizer or polarizing element and a detector disposed about the sensing element. The sensing element is responsive to an external magnetic field. In one embodiment, the optical system and sensing element can be arranged to measure the strength of a magnetic field. In another embodiment the optical system and sensing element can be arranged to measure the rotational speed of rotating members.
摘要:
The invention is a method to make compression molded motor vehicle parts from a charge of composite material with resin and fibers, such as sheet molded compound. The parts have voids, such as holes and gaps, that form in the compression mold under heat and pressure and not in secondary processing steps. The resin in the charge is melts in a reservoir in the mold to form resinous material from the charge. A flow front of resinous material is allowed to flow into a flow path around a restriction corresponding to the shape of the void from the reservoir. The flow front carries sufficient reinforcing fibers into the flow path. At least part of a border for the void forms in the flow path. The configuration is allowed to at least partially set.
摘要:
The invention is a method to make compression molded motor vehicle parts from a charge of composite material with resin and fibers, such as sheet molded compound. The parts have voids, such as holes and gaps, that form in the compression mold under heat and pressure and not in secondary processing steps. The resin in the charge is melts in a reservoir in the mold to form resinous material from the charge. A flow front of resinous material is allowed to flow into a flow path around a restriction corresponding to the shape of the void from the reservoir. The flow front carries sufficient reinforcing fibers into the flow path. At least part of a border for the void forms in the flow path. The configuration is allowed to at least partially set.
摘要:
The invention is a method to make compression molded motor vehicle parts from a charge of composite material with resin and fibers, such as sheet molded compound. The parts have voids, such as holes and gaps, that form in the compression mold under heat and pressure and not in secondary processing steps. The resin in the charge is melts in a reservoir in the mold to form resinous material from the charge. A flow front of resinous material is allowed to flow into a flow path around a restriction corresponding to the shape of the void from the reservoir. The flow front carries sufficient reinforcing fibers into the flow path. At least part of a border for the void forms in the flow path. The configuration is allowed to at least partially set.
摘要:
A mobile vehicle cab has cab extender pieces engaged to the cab rearwards relative to vehicle forward movement. The cab extenders act as extensions of the cab sides to provide aerodynamic efficiency to vehicle operation. A one-piece cab extender mounting and integrated grab handle is engaged to the rearward side of the cab and to the interior surface of the left side cab extender. The cab extender mounting and integrated grab handle contains a vertical handle portion that is integrated and between an approximately horizontal upper portion and an approximately horizontal lower portion.
摘要:
A method for the fabrication complex-transition metal oxide (CTMO)/semiconductor or dielectric substrate integrated devices includes the separation of the CTMO film growth process from the CTMO-film/semiconductor or dielectric substrate integration process. The CTMO-film is transferred from the native substrate to the final substrate for fabrication into devices. The CTMO-film is grown onto a native substrate under growth conditions chosen to provide a CTMO-film having desirable properties and thickness. No restrictions are placed upon the native substrate used, the growth method used, or on the growth conditions required. The CTMO-film is then joined to the semiconductor or dielectric substrate and the native substrate is removed, providing the basis for an integrated electronics, photonics, or MEMS device. Techniques fully compatible with semiconductor processing can be used to fabricate monolithically integrated CTMO/semiconductor devices in a first embodiment.