公开(公告)号：US20160281260A1

公开(公告)日：2016-09-29

申请号：US15008640

申请日：2016-01-28

Applicant: SunEdison, Inc.

Inventor： David L. Bender

IPC: C30B15/12 ,  C30B15/02 ,  C30B29/06 ,  C30B15/22 ,  C30B15/04 ,  C30B15/00 ,  C30B15/14

CPC classification number: C30B15/12 ,  C30B15/002 ,  C30B15/02 ,  C30B15/04 ,  C30B15/10 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract translation: 基于用于连续生长单晶锭的切克劳斯基方法的改进的系统包括低纵横比，大直径和基本平坦的坩埚，包括围绕晶体的可选堰。 低长宽比坩埚基本上消除了对流，并降低了成品单晶硅锭中的氧含量。 单独的水平控制的硅预熔化室向生长坩埚提供连续的熔融硅源，有利地消除了在晶体拉制过程中垂直行进和坩埚升高系统的需要。 坩埚下面的多个加热器在熔体上建立相应的热区。 加热器的热输出被单独控制，以提供跨熔体和晶体/熔融界面的最佳热分布，以改善晶体生长。 提供多个晶体拉伸室用于连续处理和高通量。