摘要:
An apparatus for and a method of integrating switching and transferring of synchronous optical network/synchronous digital hierarchy (SONET/SDH), plesiochronous digital hierarchy (PDH), and Ethernet signals, which integrate and provide connection of synchronous digital (SONET/SDH) signals, plesiochronous digital (PDH) signals, and Ethernet signals, mutually change the synchronous digital (SONET/SDH) signals, the plesiochronous digital (PDH) signals, and the Ethernet signals, packet switching, synchronous timeslot switching, and channel configuration management and control functions in one system. Thus, packet switching capacity, timeslot switching capacity, and packet/timeslot bridging capacity can be enlarged and configured according to corresponding application. Also, a distinctive service compared to a service provided by a separate Ethernet device or a SONET/SDH network device can be provided through a packet/timeslot bridge. In addition, varied and reliable communication service at a moderate price can be provided to service users, and decreased investment and maintenance fee can be provided to carrier service providers.
摘要:
A method of providing a quality-guaranteed service on a converged network and a network apparatus using the method are provided. The method includes: receiving a request of a quality-guaranteed service from a user terminal and providing information on the service quality of at least one adjacent network apparatus; receiving service information, including service-quality-information selected by the user terminal in the provided service-quality-information and content information, from the user terminal and transmitting the service information and a traffic-collection-start message to an adjacent network apparatus providing the selected service-quality-information; and transferring a traffic stream received from the adjacent network apparatus, to the user terminal. According to the method and apparatus, a quality-guaranteed service can be provided through a converged network.
摘要:
A CMOS image sensor is provided. The CMOS image sensor incorporates a semiconductor substrate having a photodiode area and a transistor area; a trench area formed in the photodiode area; a transistor and a floating diffusion area formed on the transistor area; a first conductive type diffusion area formed on the photodiode area; and a second conductive type diffusion area formed on the trench area above the first conductive diffusion area.
摘要:
Provided is a method for forming a semiconductor wafer having an insulator. According to the method, an insulating layer pattern and a silicon germanium layer are formed on a wafer, and a structure similar to a SOI wafer is formed. Accordingly, since the thin insulating layer pattern exists between the surface of the wafer, in which a circuit is formed, and a lower layer thereof, parasitic capacitance is reduced and thus device performance can be improved. In addition, punch through due to a short channel effect, DIBL and leakage current can be solved as with the SOI wafer. Further, the insulating layer pattern is formed instead of an insulating layer formed on the SOI wafer, so that holes are prevented from being stacked in a neutral region. Consequently, a floating body effect can be prevented from occurring.
摘要:
A method for fabricating a semiconductor device can prevent a leakage current and the decrease of threshold voltage by rounding corners of a trench. The method may include the steps of forming a pad insulating layer in a semiconductor substrate defined with an active region and a device isolation region, forming a first trench, forming polymer at inner sidewalls of the first trench, forming a second trench, removing the polymer, forming an oxide layer by thermally oxidizing the semiconductor substrate, and forming insulating layers for device isolation in the first and second trenches.
摘要:
Provided is a CMOS image sensor and method for manufacturing the same. The CMOS image sensor includes a semiconductor substrate, a gate electrode formed on the semiconductor substrate, a conductive diffusion region formed in a photodiode area of the semiconductor substrate, a floating diffusion region formed in a transistor region of the semiconductor substrate, and an oxide region formed in the semiconductor substrate below the floating diffusion region.
摘要:
Provided are a wavelength division multiple access (WDMA) central station, a WDMA user interface, and an optical layer connection service method in an optical network using a WDMA scheme. The WDMA central station for an optical layer connection service in an optical network using a WDMA scheme, includes: a WDMA connection unit for receiving optical signals transmitted from a plurality of WDMA user interfaces, distributing and selecting the optical signals, and transmitting the distributed and selected optical signals to a plurality of user stations; and a network controller unit for transceiving control information related to optical layer connection and network status information received from the plurality of WDMA user interfaces through the WDMA connection unit, wherein an optical layer connection service is provided according to request quality of the plurality of user stations.