摘要:
A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.
摘要:
The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.
摘要:
A magnetic recording and reproducing apparatus includes a magnetic recording medium including a recording layer in which at least two magnetic layers are layered on a non-magnetic substrate; and a magnetic head including a main magnetic pole for applying a recording magnetic field in a direction substantially perpendicular to a recording face of the magnetic recording medium and a microwave generating element that generates a microwave magnetic field. The relationship between a thickness Ts of a magnetic layer having a lowest magnetic anisotropy energy among the at least two magnetic layers composing the recording layer of the magnetic recording medium, and a thickness Tt of the recording layer is Ts/Tt≦0.2. The microwave generating element applies the microwave magnetic field having a width broader than the width of the recording magnetic field generated by the main magnetic pole of the magnetic head to the magnetic recording medium.
摘要:
At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.
摘要:
Ion irradiation is applied to the surface of a recording layer which has a granular structure containing ferromagnetic particles which are composed of an L10 ordered alloy and a non-magnetic intergranular layer, thereby the ferromagnetic particles in the side of the substrate are transformed into an L10 ordered alloy having a high magnetic anisotropy, and the ferromagnetic particles in the side of the surface of the medium are transformed into an A1 disordered alloy having a low magnetic anisotropy.