公开(公告)号：US3897274A

公开(公告)日：1975-07-29

申请号：US34048473

申请日：1973-03-12

Applicant: TEXAS INSTRUMENTS INC

Inventor： STEHLIN ROBERT A ,  DEXTER RICHARD J ,  KENDALL DON L ,  PANKRATZ JOHN M

IPC: H01L21/00 ,  H01L21/265 ,  H01L21/762 ,  H01L23/29 ,  H01L7/54

CPC classification number: H01L23/29 ,  H01L21/00 ,  H01L21/26533 ,  H01L21/76243 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/085 ,  Y10S148/106 ,  Y10S148/118 ,  Y10S148/145 ,  Y10S438/973 ,  H01L2924/00

Abstract: Various regions or pockets are defined within a substrate that comprises an integral body of semiconductor material. The regions extend to a surface of the substrate and are isolated one from another by dielectric layers that enclose each region, extending to the surface of the substrate around the periphery of each region. In one aspect of the invention the dielectric layer extends to the surface of the substrate at an acute angle thereto. The dielectric layer is formed using ion implantation techniques to implant selected ions to a desired depth in the substrate where they combine with the semiconductor material to form an insulating compound.

Abstract translation: 在包括半导体材料的整体的衬底内限定各种区域或凹穴。 这些区域延伸到衬底的表面，并且通过围绕每个区域的电介质层彼此分离，延伸到围绕每个区域的周边的衬底的表面。 在本发明的一个方面，电介质层以其锐角延伸到基板的表面。 使用离子注入技术形成电介质层，以将选定的离子注入到衬底中所需的深度，在衬底中它们与半导体材料组合以形成绝缘化合物。