公开(公告)号：US3577015A

公开(公告)日：1971-05-04

申请号：US3577015D

申请日：1968-12-30

Applicant: TEXAS INSTRUMENTS INC

Inventor： NIEMANN GEORGE W ,  STEHLIN ROBERT A

IPC: H03K3/284 ,  H03K3/26

CPC classification number: H03K3/284

Abstract: The invention disclosed is a monostable multivibrator circuit having first and second pairs of complementary transistors, with each pair connected collector-to-collector in series. The bases of the first pair of transistors are coupled to a first output terminal at the juncture between collectors of the second pair of transistors. The bases of the second pair of transistors are coupled to a second output terminal at the juncture between the collectors of the first pair of transistors. Terminals are provided for applying electrical power across the first and second pairs of transistors in order to maintain one transistor in each of the transistor pairs in a conductive state. A normally nonconductive trigger transistor is connected to the circuit for receiving a trigger signal in order to vary the state of each of the transistors for a preselected monostable timing period.

公开(公告)号：US3916332A

公开(公告)日：1975-10-28

申请号：US19627871

申请日：1971-11-08

Applicant: TEXAS INSTRUMENTS INC

Inventor： SPENCE HILTON W ,  STEHLIN ROBERT A

IPC: G11C11/06 ,  H03F3/72 ,  H03K5/02 ,  H03F3/08

CPC classification number: H03F3/72 ,  G11C11/06007 ,  H03K5/02

Abstract: A radiation tolerant differential buffer amplifier provides amplification to small amplitude input signals. Circuitry is provided to selectively gate portions of the input signals for reduction of noise problems. Biasing circuitry sets a constant DC bias level for the amplifier to accomplish generally constant triggering of the amplifier.

Abstract translation: 辐射耐受差分缓冲放大器为小幅度输入信号提供放大。 提供电路以选择性地选择输入信号的栅极部分，以减少噪声问题。 偏置电路为放大器设置恒定的直流偏置电平，以实现放大器的大体上恒定的触发。

公开(公告)号：US3474309A

公开(公告)日：1969-10-21

申请号：US3474309D

申请日：1967-06-30

Applicant: TEXAS INSTRUMENTS INC

Inventor： STEHLIN ROBERT A

IPC: H01L21/761 ,  H01L21/8228 ,  H01L27/06 ,  H01L27/082 ,  H01L19/00

CPC classification number: H01L21/82285 ,  H01L21/761 ,  H01L27/0652 ,  H01L27/0826 ,  Y10S148/035 ,  Y10S148/037 ,  Y10S148/085

公开(公告)号：US3897274A

公开(公告)日：1975-07-29

申请号：US34048473

申请日：1973-03-12

Applicant: TEXAS INSTRUMENTS INC

Inventor： STEHLIN ROBERT A ,  DEXTER RICHARD J ,  KENDALL DON L ,  PANKRATZ JOHN M

IPC: H01L21/00 ,  H01L21/265 ,  H01L21/762 ,  H01L23/29 ,  H01L7/54

CPC classification number: H01L23/29 ,  H01L21/00 ,  H01L21/26533 ,  H01L21/76243 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/085 ,  Y10S148/106 ,  Y10S148/118 ,  Y10S148/145 ,  Y10S438/973 ,  H01L2924/00

Abstract: Various regions or pockets are defined within a substrate that comprises an integral body of semiconductor material. The regions extend to a surface of the substrate and are isolated one from another by dielectric layers that enclose each region, extending to the surface of the substrate around the periphery of each region. In one aspect of the invention the dielectric layer extends to the surface of the substrate at an acute angle thereto. The dielectric layer is formed using ion implantation techniques to implant selected ions to a desired depth in the substrate where they combine with the semiconductor material to form an insulating compound.

Abstract translation: 在包括半导体材料的整体的衬底内限定各种区域或凹穴。 这些区域延伸到衬底的表面，并且通过围绕每个区域的电介质层彼此分离，延伸到围绕每个区域的周边的衬底的表面。 在本发明的一个方面，电介质层以其锐角延伸到基板的表面。 使用离子注入技术形成电介质层，以将选定的离子注入到衬底中所需的深度，在衬底中它们与半导体材料组合以形成绝缘化合物。

公开(公告)号：US3465215A

公开(公告)日：1969-09-02

申请号：US3465215D

申请日：1967-06-30

Applicant: TEXAS INSTRUMENTS INC

Inventor： BOHANNON RALPH O JR ,  STEHLIN ROBERT A

IPC: H01L21/761 ,  H01L21/8228 ,  H01L27/06 ,  H01L27/082 ,  H01L11/00 ,  H01L7/00

CPC classification number: H01L21/82285 ,  H01L21/761 ,  H01L27/0652 ,  H01L27/0826 ,  Y10S148/035 ,  Y10S148/037 ,  Y10S148/085

公开(公告)号：US3882356A

公开(公告)日：1975-05-06

申请号：US42673473

申请日：1973-12-20

Applicant: TEXAS INSTRUMENTS INC

Inventor： STEHLIN ROBERT A

IPC: H05B41/30 ,  H05B41/392 ,  H05B41/39

CPC classification number: H05B41/392 ,  H05B41/30 ,  Y10S315/05 ,  Y10S315/07

Abstract: An improved arrangement for coupling logic drivers to power devices in a solid-state fluorescent lamp ballast system in which the necessary isolation between the high voltage power devices in the solid-state ballast system and the logic drivers is obtained by using level shifter transistors in which the power switch to be isolated is selected to be a PNP transistor and the transistor for driving and isolating the PNP transistor is an NPN level shifter transistor.

Abstract translation: 用于将逻辑驱动器耦合到固态荧光灯镇流器系统中的功率器件的改进布置，其中通过使用电平移位器晶体管获得固态镇流器系统中的高电压功率器件与逻辑驱动器之间的必要隔离，其中， 要隔离的电源开关被选择为PNP晶体管，并且用于驱动和隔离PNP晶体管的晶体管是NPN电平移位晶体管。

公开(公告)号：US3697337A

公开(公告)日：1972-10-10

申请号：US3697337D

申请日：1969-02-05

Applicant: TEXAS INSTRUMENTS INC

Inventor： STEHLIN ROBERT A

IPC: H01L21/761 ,  H01L21/82 ,  H01L27/06 ,  H01L27/082 ,  H01L7/36 ,  H01L19/00

CPC classification number: H01L21/82 ,  H01L21/761 ,  H01L27/0652 ,  H01L27/0826 ,  Y10S148/085 ,  Y10S438/901

Abstract: A PROCESS FOR FABRICATING A MONOLITHIC CIRCULT HAVING BOTH MATCHED COMPLEMENTARY PNP AND NPN TRANSISTORS AND DOUBLE JUNCTION CAPACITORS HAVING A HIGH Q VALUE. INSOLATED N-TYPE REGIONS FOR EACH TRANSISTOR AND THE CAPACITOR ARE FORMED BY DIFFUSING P-TYPE ISOLATION RINGS THROUGH AN N-TYPE EPITAXIAL LAYER INTO A P-TYPE SUBSTRATE. SEPARATE DIFFUSIONS ARE THEN MADE FOR THE COLLECTOR, BASE AND EMITTER OF THE PNP TRANSISTOR AND FOR THE BASE AND EMITTER OF THE NPN TRANSISTOR. THE CAPICITOR IS FORMED BY THE SAME DIFFUSIONS THAT FORM THE COLLECTOR REGION OF THE PNP TRANSISTOR AND THE DIFFUSION THAT FORMS THE EMITTER OF THE NPN TRANSISTOR. THE COLLECTOR DIFFUSION FOR THE PNP TRANSISTOR IS RELATIVELY DEEP AND THE EMITTER DIFFUSION FOR THE NPN SISTIVITY CHARGING PATH THROUGH THE P-TYPE REGION TO THE OPPOSED JUNCTIONS FORMING THE CAPACITOR.