SYSTEMS AND METHODS FOR DYNAMIC Rdson MEASUREMENT

    公开(公告)号:US20190011493A1

    公开(公告)日:2019-01-10

    申请号:US16130035

    申请日:2018-09-13

    CPC classification number: G01R31/2628 G01R31/2642 G01R31/2849

    Abstract: In at least some embodiments, a system comprises a socket gate terminal configured to receive a first voltage to activate and inactivate a device under test (DUT) coupled to the socket gate terminal. The system also comprises a socket source terminal configured to provide a reference voltage to the DUT. The system further comprises a socket drain terminal configured to provide a second voltage to the DUT to stress the DUT when the DUT is inactive. The socket drain terminal is further configured to receive a third voltage to cause a current to flow through a pathway in the DUT between the socket drain terminal and the socket source terminal when the DUT is active. The socket drain terminal is further configured to provide a fourth voltage indicative of a resistance of the pathway in the DUT when the DUT is active and is heated to a temperature above an ambient temperature associated with the system.

    SYSTEMS AND METHODS FOR DYNAMIC Rdson MEASUREMENT

    公开(公告)号:US20180188313A1

    公开(公告)日:2018-07-05

    申请号:US15395907

    申请日:2016-12-30

    CPC classification number: G01R31/2628 G01R31/2849

    Abstract: In at least some embodiments, a system comprises a socket gate terminal configured to receive a first voltage to activate and inactivate a device under test (DUT) coupled to the socket gate terminal. The system also comprises a socket source terminal configured to provide a reference voltage to the DUT. The system further comprises a socket drain terminal configured to provide a second voltage to the DUT to stress the DUT when the DUT is inactive. The socket drain terminal is further configured to receive a third voltage to cause a current to flow through a pathway in the DUT between the socket drain terminal and the socket source terminal when the DUT is active. The socket drain terminal is further configured to provide a fourth voltage indicative of a resistance of the pathway in the DUT when the DUT is active and is heated to a temperature above an ambient temperature associated with the system.

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