Abstract:
A first branch group circuit includes a first branch circuit receiving a first RF input signal and first control information; and a second branch circuit receiving the first input signal and second control information. Each of the first and second branch circuits includes a power amplifier. The second control information enables the second branch circuit to be switched on or off while the first branch circuit remains on. A second branch group circuit includes: a third branch circuit receiving a second RF input signal and third control information; and a fourth branch circuit receiving the second input signal and fourth control information. Each of the third and fourth branch circuits includes a power amplifier. The fourth control information enables the fourth branch circuit to be switched on or off while the third branch circuit remains on. A combiner combines output signals of the power amplifiers to produce an output signal.
Abstract:
An outphasing amplifier includes a first class-E power amplifier (16-1) having an output coupled to a first conductor (31-1) and an input receiving a first RF drive signal (S1(t)). A first reactive element (CA-1) is coupled between the first conductor and a second conductor (30-1). A second reactive element (LA-1) is coupled between the second conductor and a third conductor (32-1). A second class-E power amplifier (17-1) includes an output coupled to a fourth conductor (31-2) and an input coupled to a second RF drive signal (S2(t)), a third reactive element (CA-3) coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load (R). An efficiency enhancement circuit (LEEC-1) is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits (20-1,2) are coupled to the first and fourth conductors, respectively.
Abstract:
A multi-level, multi-branch outphasing amplifier (20-1) includes a first branch group circuit (22-1) including a first branch circuit (11) receiving a first RF input signal (S1(t)) and first control information (S11_Ctrl=VDD) and a second branch circuit (12) receiving the first input signal and second control information (S12_Ctrl). Each of the first (11) and second (12) branch circuits includes a power amplifier. The second control information enables the second branch circuit to be switched on or off while the first branch circuit (12) remains on. A second branch group circuit (22-2) includes a third branch circuit (21) receiving a second RF input signal (S2(t)) and third control information (S21_Ctrl=VDD) and a fourth branch circuit (22) receiving the second input signal (S2(t)) and fourth control information (S22_Ctrl). Each of the third and fourth branch circuits includes a power amplifier. The fourth control information enables the fourth branch circuit to be switched on or off while the third branch circuit remains on. A combiner (24) combines output signals of the power amplifiers to produce an output signal (SOUT(t)).
Abstract:
An outphasing amplifier includes a first class-E power amplifier (16-1) having an output coupled to a first conductor (31-1) and an input receiving a first RF drive signal (S1(t)). A first reactive element (CA-1) is coupled between the first conductor and a second conductor (30-1). A second reactive element (LA-1) is coupled between the second conductor and a third conductor (32-1). A second class-E power amplifier (17-1) includes an output coupled to a fourth conductor (31-2) and an input coupled to a second RF drive signal (S2(t)), a third reactive element (CA-3) coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load (R). An efficiency enhancement circuit (LEEC-1) is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits (20-1,2) are coupled to the first and fourth conductors, respectively.
Abstract:
A multi-level, multi-branch outphasing amplifier (20-1) includes a first branch group circuit (22-1) including a first branch circuit (11) receiving a first RF input signal (S1(t)) and first control information (S11—Ctrl=VDD) and a second branch circuit (12) receiving the first input signal and second control information (S12—Ctrl). Each of the first (11) and second (12) branch circuits includes a power amplifier. The second control information enables the second branch circuit to be switched on or off while the first branch circuit (12) remains on. A second branch group circuit (22-2) includes a third branch circuit (21) receiving a second RF input signal (S2(t)) and third control information (S21—Ctrl=VDD) and a fourth branch circuit (22) receiving the second input signal (S2(t)) and fourth control information (S22—Ctrl). Each of the third and fourth branch circuits includes a power amplifier. The fourth control information enables the fourth branch circuit to be switched on or off while the third branch circuit remains on. A combiner (24) combines output signals of the power amplifiers to produce an output signal (SOUT(t)).
Abstract:
An outphasing amplifier includes a first class-E power amplifier having an output coupled to a first conductor and an input receiving a first RF drive signal. A first reactive element is coupled between the first conductor and a second conductor. A second reactive element is coupled between the second conductor and a third conductor. A second class-E power amplifier includes an output coupled to a fourth conductor and an input coupled to a second RF drive signal, a third reactive element coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load. An efficiency enhancement circuit is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits are coupled to the first and fourth conductors, respectively.
Abstract:
An outphasing amplifier includes a first class-E power amplifier (16-1) having an output coupled to a first conductor (31-1) and an input receiving a first RF drive signal (S1(t)). A first reactive element (CA-1) is coupled between the first conductor and a second conductor (30-1). A second reactive element (LA-1) is coupled between the second conductor and a third conductor (32-1). A second class-E power amplifier (17-1) includes an output coupled to a fourth conductor (31-2) and an input coupled to a second RF drive signal (S2(t)), a third reactive element (CA-3) coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load (R). An efficiency enhancement circuit (LEEC-1) is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits (20-1,2) are coupled to the first and fourth conductors, respectively.
Abstract:
A circuit includes an amplifier configured to amplify an input signal and generate an output signal. The circuit also includes a tuning network configured to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, where the at least one tunable capacitor includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure disposed over a control structure, where the control structure is configured to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.
Abstract:
A circuit includes an amplifier configured to amplify an input signal and generate an output signal. The circuit also includes a tuning network configured to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, where the at least one tunable capacitor includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure disposed over a control structure, where the control structure is configured to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.
Abstract:
A circuit includes an amplifier configured to amplify an input signal and generate an output signal. The circuit also includes a tuning network configured to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, where the at least one tunable capacitor includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure disposed over a control structure, where the control structure is configured to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.