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1.发明授权Raised source/drain MOS transistor and method of forming the transistor with an implant spacer and an epitaxial spacer 有权上升的源极/漏极MOS晶体管和用植入物间隔物和外延间隔物形成晶体管的方法公开(公告)号：US09178038B2
公开(公告)日：2015-11-03
申请号：US14609051
申请日：2015-01-29
Applicant: Texas Instruments Incorporated
Inventor： Seung-Chul Song , James W. Blatchford , Kwan-Yong Lim
IPC: H01L21/336 , H01L29/78 , H01L29/66 , H01L21/265 , H01L29/08 , H01L29/417
CPC classification number: H01L29/6659 , H01L21/265 , H01L29/0847 , H01L29/41783 , H01L29/6653 , H01L29/6656 , H01L29/66628 , H01L29/7834
Abstract: A raised source/drain MOS transistor is formed in a process that utilizes a first sidewall spacer when implanting a semiconductor region to form the heavily-doped source region and the heavily-doped drain region of the transistor, and a second different sidewall spacer when epitaxially growing the raised source region and the raised drain region of the transistor.
Abstract translation: 凸起的源极/漏极MOS晶体管形成在利用第一侧壁间隔物的过程中，当注入半导体区域以形成晶体管的重掺杂源极区域和重掺杂漏极区域时，以及第二不同侧壁间隔物，当外延 生长晶体管的升高的源极区域和升高的漏极区域。
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2.发明申请RAISED SOURCE/DRAIN MOS TRANSISTOR AND METHOD OF FORMING THE TRANSISTOR WITH AN IMPLANT SPACER AND AN EPITAXIAL SPACER 审中-公开上升源/漏极MOS晶体管和形成具有外延空间和外延空间的晶体管的方法公开(公告)号：US20150140769A1
公开(公告)日：2015-05-21
申请号：US14609051
申请日：2015-01-29
Applicant: Texas Instruments Incorporated
Inventor： Seung-Chul Song , James W. Blatchford , Kwan-Yong Lim
IPC: H01L29/66 , H01L29/417 , H01L29/08 , H01L21/265
CPC classification number: H01L29/6659 , H01L21/265 , H01L29/0847 , H01L29/41783 , H01L29/6653 , H01L29/6656 , H01L29/66628 , H01L29/7834
Abstract: A raised source/drain MOS transistor is formed in a process that utilizes a first sidewall spacer when implanting a semiconductor region to form the heavily-doped source region and the heavily-doped drain region of the transistor, and a second different sidewall spacer when epitaxially growing the raised source region and the raised drain region of the transistor.
Abstract translation: 凸起的源极/漏极MOS晶体管形成在利用第一侧壁间隔物的过程中，当注入半导体区域以形成晶体管的重掺杂源极区域和重掺杂漏极区域时，以及第二不同侧壁间隔物，当外延 生长晶体管的升高的源极区域和升高的漏极区域。
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3.发明申请Raised Source/Drain MOS Transistor and Method of Forming the Transistor with an Implant Spacer and an Epitaxial Spacer 审中-公开升高源极/漏极MOS晶体管及其与植入物间隔物和外延间隔物形成晶体管的方法公开(公告)号：US20140183663A1
公开(公告)日：2014-07-03
申请号：US13729282
申请日：2012-12-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Seung-Chul Song , James W. Blatchford , Kwan-Yong Lim
CPC classification number: H01L29/6659 , H01L21/265 , H01L29/0847 , H01L29/41783 , H01L29/6653 , H01L29/6656 , H01L29/66628 , H01L29/7834
Abstract: A raised source/drain MOS transistor is formed in a process that utilizes a first sidewall spacer when implanting a semiconductor region to form the heavily-doped source region and the heavily-doped drain region of the transistor, and a second different sidewall spacer when epitaxially growing the raised source region and the raised drain region of the transistor.
Abstract translation: 凸起的源极/漏极MOS晶体管形成在利用第一侧壁间隔物的过程中，当注入半导体区域以形成晶体管的重掺杂源极区域和重掺杂漏极区域时，以及第二不同侧壁间隔物，当外延 生长晶体管的升高的源极区域和升高的漏极区域。
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