公开(公告)号：US10116270B2

公开(公告)日：2018-10-30

申请号：US15265257

申请日：2016-09-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Aritra Banerjee ,  Nathan R. Schemm ,  Rahmi Hezar ,  Lei Ding ,  Baher Haroun

IPC: H03F3/191 ,  H03F1/42 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  B81B7/02 ,  H03F1/22 ,  H03F3/195 ,  H03F3/24 ,  H03F1/56 ,  H03F3/193

Abstract: A circuit includes an amplifier configured to amplify an input signal and generate an output signal. The circuit also includes a tuning network configured to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, where the at least one tunable capacitor includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure disposed over a control structure, where the control structure is configured to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

公开(公告)号：US20170005628A1

公开(公告)日：2017-01-05

申请号：US15265257

申请日：2016-09-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Aritra Banerjee ,  Nathan R. Schemm ,  Rahmi Hezar ,  Lei Ding ,  Baher Haroun

IPC: H03F1/42 ,  H03F3/21 ,  H03F3/193

CPC classification number: H03F1/42 ,  B81B7/02 ,  B81B2207/99 ,  H01G5/16 ,  H01G5/38 ,  H01G5/40 ,  H01L23/66 ,  H01L2223/6655 ,  H03F1/0205 ,  H03F1/0294 ,  H03F1/223 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/245 ,  H03F2200/111 ,  H03F2200/378 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2200/546 ,  H03F2203/21157

Abstract: A circuit includes an amplifier configured to amplify an input signal and generate an output signal. The circuit also includes a tuning network configured to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, where the at least one tunable capacitor includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure disposed over a control structure, where the control structure is configured to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

Abstract translation: 电路包括被配置为放大输入信号并产生输出信号的放大器。 电路还包括配置成调节放大器的频率响应的调谐网络。 调谐网络包括至少一个可调谐电容器，其中至少一个可调电容器包括至少一个微机电系统（MEMS）电容器。 放大器可以包括第一管芯，所述至少一个MEMS电容器可以包括第二管芯，并且第一管芯和第二管芯可以集成在单个封装中。 所述至少一个MEMS电容器可以包括设置在控制结构上的MEMS超结构，其中所述控制结构被配置为控制所述MEMS超结构并调谐所述至少一个MEMS电容器的电容。

公开(公告)号：US09473078B2

公开(公告)日：2016-10-18

申请号：US14452365

申请日：2014-08-05

Applicant: Texas Instruments Incorporated

Inventor： Aritra Banerjee ,  Nathan R. Schemm ,  Rahmi Hezar ,  Lei Ding ,  Baher Haroun

IPC: H03F3/191 ,  H03F1/42 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  B81B7/02 ,  H03F1/22 ,  H03F3/195 ,  H03F3/24 ,  H03F1/56 ,  H03F3/193

CPC classification number: H03F1/42 ,  B81B7/02 ,  B81B2207/99 ,  H01G5/16 ,  H01G5/38 ,  H01G5/40 ,  H01L23/66 ,  H01L2223/6655 ,  H03F1/0205 ,  H03F1/0294 ,  H03F1/223 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/245 ,  H03F2200/111 ,  H03F2200/378 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2200/546 ,  H03F2203/21157

Abstract: A circuit includes an amplifier configured to amplify an input signal and generate an output signal. The circuit also includes a tuning network configured to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, where the at least one tunable capacitor includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure disposed over a control structure, where the control structure is configured to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

Abstract translation: 电路包括被配置为放大输入信号并产生输出信号的放大器。 电路还包括配置成调节放大器的频率响应的调谐网络。 调谐网络包括至少一个可调谐电容器，其中至少一个可调电容器包括至少一个微机电系统（MEMS）电容器。 放大器可以包括第一管芯，所述至少一个MEMS电容器可以包括第二管芯，并且第一管芯和第二管芯可以集成在单个封装中。 所述至少一个MEMS电容器可以包括设置在控制结构上的MEMS超结构，其中所述控制结构被配置为控制所述MEMS超结构并调谐所述至少一个MEMS电容器的电容。

公开(公告)号：US10666204B2

公开(公告)日：2020-05-26

申请号：US16173830

申请日：2018-10-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Aritra Banerjee ,  Nathan R. Schemm ,  Rahmi Hezar ,  Lei Ding ,  Baher Haroun

IPC: H03F3/191 ,  H03F1/42 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  B81B7/02 ,  H03F1/22 ,  H03F3/195 ,  H03F3/24 ,  H03F1/56 ,  H03F3/193 ,  H01L23/66 ,  H01G5/16 ,  H01G5/38 ,  H01G5/40

Abstract: A circuit includes an amplifier to amplify an input signal and generate an output signal. The circuit also includes a tuning network to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, which includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure over a control structure, which is to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

公开(公告)号：US20190068135A1

公开(公告)日：2019-02-28

申请号：US16173830

申请日：2018-10-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Aritra Banerjee ,  Nathan R. Schemm ,  Rahmi Hezar ,  Lei Ding ,  Baher Haroun

IPC: H03F1/42 ,  H03F1/56 ,  B81B7/02 ,  H03F3/21 ,  H03F3/19 ,  H03F1/02 ,  H01L23/66

CPC classification number: H03F1/42 ,  B81B7/02 ,  B81B2207/99 ,  H01G5/16 ,  H01G5/38 ,  H01G5/40 ,  H01L23/66 ,  H01L2223/6655 ,  H03F1/0205 ,  H03F1/0294 ,  H03F1/223 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/245 ,  H03F2200/111 ,  H03F2200/378 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2200/546 ,  H03F2203/21157

Abstract: A circuit includes an amplifier to amplify an input signal and generate an output signal. The circuit also includes a tuning network to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, which includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure over a control structure, which is to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

公开(公告)号：US20160043698A1

公开(公告)日：2016-02-11

申请号：US14452365

申请日：2014-08-05

Applicant: Texas Instruments Incorporated

Inventor： Aritra Banerjee ,  Nathan R. Schemm ,  Rahmi Hezar ,  Lei Ding ,  Baher Haroun

IPC: H03F1/42 ,  B81B7/02 ,  H03F3/21 ,  H03F1/02 ,  H03F3/19

CPC classification number: H03F1/42 ,  B81B7/02 ,  B81B2207/99 ,  H01G5/16 ,  H01G5/38 ,  H01G5/40 ,  H01L23/66 ,  H01L2223/6655 ,  H03F1/0205 ,  H03F1/0294 ,  H03F1/223 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/245 ,  H03F2200/111 ,  H03F2200/378 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2200/546 ,  H03F2203/21157

Abstract: A circuit includes an amplifier configured to amplify an input signal and generate an output signal. The circuit also includes a tuning network configured to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, where the at least one tunable capacitor includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure disposed over a control structure, where the control structure is configured to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

Abstract translation: 电路包括被配置为放大输入信号并产生输出信号的放大器。 电路还包括配置成调节放大器的频率响应的调谐网络。 调谐网络包括至少一个可调谐电容器，其中至少一个可调电容器包括至少一个微机电系统（MEMS）电容器。 放大器可以包括第一管芯，所述至少一个MEMS电容器可以包括第二管芯，并且第一管芯和第二管芯可以集成在单个封装中。 所述至少一个MEMS电容器可以包括设置在控制结构上的MEMS超结构，其中所述控制结构被配置为控制所述MEMS超结构并调谐所述至少一个MEMS电容器的电容。