公开(公告)号：US20160064213A1

公开(公告)日：2016-03-03

申请号：US14784725

申请日：2013-04-18

Applicant: TOHOKU UNIVERSITY ,  STELLA CHEMIFA CORPORATION

Inventor： Takeshi Sakai ,  Tatsuro Yoshida ,  Ryosuke Hiratsuka ,  Syun Ishikawa ,  Tadahiro Ohmi ,  Rui Hasebe ,  Jun Takano ,  Hirohisa Kikuyama ,  Masashi Yamamoto

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02063 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/76898

Abstract: There is provided a method for processing an inner wall surface of a micro vacancy, capable of reliably etching and cleaning even if the hole provided to the substrate to be processed is narrow and deep. The substrate has a surface on which a processing solution is to be applied and a micro vacancy with an opening on the surface. An aspect ratio (l/r) of the micro vacancy being at least 5, or the aspect ratio being less than 5 and a ratio (V/S) of a micro vacancy volume (V) to a surface area of the opening (S) being at least 3. The substrate is arranged in a processing space. Next, the processing space is depressurized, and subsequently the processing solution is introduced into the processing space so as to process the inner wall surface of the micro vacancy.

Abstract translation: 提供了一种用于处理微空位的内壁表面的方法，即使提供给待处理的基板的孔窄且深，也能够可靠地蚀刻和清洁。 衬底具有在其上施加处理溶液的表面和在表面上具有开口的微空位。 微空位的纵横比（l / r）至少为5，纵横比小于5，微空位体积（V）与开口表面积（S）的比（V / S） ）至少为3.衬底布置在处理空间中。 接下来，处理空间被减压，随后将处理溶液引入处理空间，以处理微空缺的内壁表面。