公开(公告)号：US20160064213A1

公开(公告)日：2016-03-03

申请号：US14784725

申请日：2013-04-18

Applicant: TOHOKU UNIVERSITY ,  STELLA CHEMIFA CORPORATION

Inventor： Takeshi Sakai ,  Tatsuro Yoshida ,  Ryosuke Hiratsuka ,  Syun Ishikawa ,  Tadahiro Ohmi ,  Rui Hasebe ,  Jun Takano ,  Hirohisa Kikuyama ,  Masashi Yamamoto

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02063 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/76898

Abstract: There is provided a method for processing an inner wall surface of a micro vacancy, capable of reliably etching and cleaning even if the hole provided to the substrate to be processed is narrow and deep. The substrate has a surface on which a processing solution is to be applied and a micro vacancy with an opening on the surface. An aspect ratio (l/r) of the micro vacancy being at least 5, or the aspect ratio being less than 5 and a ratio (V/S) of a micro vacancy volume (V) to a surface area of the opening (S) being at least 3. The substrate is arranged in a processing space. Next, the processing space is depressurized, and subsequently the processing solution is introduced into the processing space so as to process the inner wall surface of the micro vacancy.

Abstract translation: 提供了一种用于处理微空位的内壁表面的方法，即使提供给待处理的基板的孔窄且深，也能够可靠地蚀刻和清洁。 衬底具有在其上施加处理溶液的表面和在表面上具有开口的微空位。 微空位的纵横比（l / r）至少为5，纵横比小于5，微空位体积（V）与开口表面积（S）的比（V / S） ）至少为3.衬底布置在处理空间中。 接下来，处理空间被减压，随后将处理溶液引入处理空间，以处理微空缺的内壁表面。

公开(公告)号：US20140256065A1

公开(公告)日：2014-09-11

申请号：US14281954

申请日：2014-05-20

Applicant: Tohoku University

Inventor： Takeshi Sakai ,  Tatsuro Yoshida ,  Kazuhiro Yoshikawa ,  Shigetoshi Sugawa

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L22/26 ,  H01L21/30604 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67248 ,  H01L27/14683

Abstract: There is provided an etching method. A temperature at a plurality of predetermined positions on an upper surface of an Si substrate is measured during the etching processing. The etching processing includes supplying an etching solution to the upper surface of the Si substrate. An exothermic reaction occurs in the etching processing. The upper surface is heated or cooled depending on the measured value.

Abstract translation: 提供蚀刻方法。 在蚀刻处理期间测量Si衬底的上表面上的多个预定位置处的温度。 蚀刻处理包括向Si衬底的上表面提供蚀刻溶液。 在蚀刻处理中发生放热反应。 上表面根据测量值进行加热或冷却。

公开(公告)号：US20160086845A1

公开(公告)日：2016-03-24

申请号：US14891020

申请日：2013-05-15

Applicant: TOHOKU UNIVERSITY

Inventor： Takeshi Sakai ,  Tatsuro Yoshida ,  Ryosuke Hiratsuka ,  Syun Ishikawa

IPC: H01L21/768 ,  H01L21/306

CPC classification number: H01L21/76814 ,  B05D1/00 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/76831 ,  H01L21/76898

Abstract: There is provided a method for processing an inner wall surface of a micro vacancy, capable of reliably etching or cleaning even if the hole provided to the substrate to be processed is narrow and deep. The substrate has a surface and a micro vacancy with an opening on the surface. An aspect ratio of the micro vacancy being at least 5, or the aspect ratio being less than 5 and a ratio of a micro vacancy volume to a surface area of the opening being at least 3. The micro vacancy is exposed to an atmosphere for forming a silicon oxide film so as to form a silicon oxide film on the inner wall surface of the micro vacancy. Subsequently a processing solution with a wettability with respect to silicon oxide is introduced into the micro vacancy so as to perform processing of the inner wall surface.

Abstract translation: 提供了一种用于处理微空缺的内壁表面的方法，即使提供给待处理的基板的孔窄且深，也能够可靠地蚀刻或清洁。 衬底具有表面和在表面上具有开口的微空位。 微空位的纵横比至少为5，纵横比小于5，微空隙体积与开口表面积之比至少为3.微空位暴露于形成气氛 氧化硅膜，以在微空隙的内壁表面上形成氧化硅膜。 随后，将具有相对于氧化硅的润湿性的处理溶液引入微空位，以进行内壁表面的处理。

公开(公告)号：US09190337B2

公开(公告)日：2015-11-17

申请号：US14281954

申请日：2014-05-20

Applicant: Tohoku University

Inventor： Takeshi Sakai ,  Tatsuro Yoshida ,  Kazuhiro Yoshikawa ,  Shigetoshi Sugawa

IPC: H01L21/66 ,  H01L21/306 ,  H01L21/67 ,  H01L27/146

CPC classification number: H01L22/26 ,  H01L21/30604 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67248 ,  H01L27/14683

Abstract: There is provided an etching method. A temperature at a plurality of predetermined positions on an upper surface of an Si substrate is measured during the etching processing. The etching processing includes supplying an etching solution to the upper surface of the Si substrate. An exothermic reaction occurs in the etching processing. The upper surface is heated or cooled depending on the measured value.

Abstract translation: 提供蚀刻方法。 在蚀刻处理期间测量Si衬底的上表面上的多个预定位置处的温度。 蚀刻处理包括向Si衬底的上表面提供蚀刻溶液。 在蚀刻处理中发生放热反应。 上表面根据测量值进行加热或冷却。