公开(公告)号：US20150318220A1

公开(公告)日：2015-11-05

申请号：US14700851

申请日：2015-04-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuuki KOBAYASHI ,  Hirokazu UEDA ,  Kohei YAMASHITA ,  Peter L.G. VENTZEK

IPC: H01L21/66 ,  H01L21/265 ,  H01J37/317 ,  G01J3/443 ,  H01L21/67

CPC classification number: G01J3/443 ,  H01J37/3171 ,  H01J37/32192 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/67 ,  H01L21/67253 ,  H01L22/10

Abstract: There is provided a plasma processing apparatus, which includes: a processing chamber into which a target substrate is loaded and in which a dopant is implanted into the target substrate using a plasma of a gas which contains an element used as the dopant; a wall probe configured to measure a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber; an OES (Optical Emission Spectrometer) configured to measure a light emission intensity of the dopant existing in the plasma; and a calculation unit configured to calculate a dose amount of the dopant implanted into the target substrate, based on a measurement result obtained at the wall probe and a measurement result obtained at the OES.

Abstract translation: 提供了一种等离子体处理装置，其包括：处理室，其中装载目标基板并使用包含用作掺杂剂的元素的气体的等离子体将掺杂剂注入其中; 壁探针，被配置为测量对应于在所述处理室内产生的等离子体中的带电粒子的密度的电压变化; 被配置为测量存在于等离子体中的掺杂剂的发光强度的OES（发射光谱仪）; 以及计算单元，被配置为基于在所述壁探针获得的测量结果和在所述OES获得的测量结果来计算注入到所述目标衬底中的掺杂剂的剂量。