公开(公告)号：US20200035628A1

公开(公告)日：2020-01-30

申请号：US16503773

申请日：2019-07-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Hsun HUANG ,  Po-Han WANG ,  Ing-Ju LEE ,  Chao-Lung CHEN ,  Cheng-Ming WU

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

Abstract: Methods of fabricating semiconductor devices are provided. The method includes providing a substrate and forming an interconnect structure on the substrate. The interconnect structure includes a top metal layer. The method also includes forming a first barrier film on the top metal layer using a first deposition process with a first level of power, and forming a second barrier film on the first barrier film using a second deposition process with a second level of power that is lower than the first level of power. The method further includes forming an aluminum-containing layer on the second barrier film. In addition, the method includes patterning the first barrier film, the second barrier film and the aluminum-containing layer to form a conductive pad structure.

公开(公告)号：US20180226419A1

公开(公告)日：2018-08-09

申请号：US15941669

申请日：2018-03-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Ching-Yen HSAIO ,  Cheng-Ming WU ,  Shih-Lu HSU ,  Chien-Hsian WANG

IPC: H01L27/11521 ,  H01L29/06 ,  H01L29/788 ,  H01L21/28 ,  H01L21/027 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L27/11521 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/28008 ,  H01L21/32139 ,  H01L29/0649 ,  H01L29/40114 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack and a conductive layer over a semiconductor substrate. The semiconductor substrate has a first region and a second region isolated from each other by an isolation structure in the semiconductor substrate. The gate stack is formed over the first region. The method includes forming a negative photoresist layer over the first region and a first portion of the conductive layer over the isolation structure to cover the gate stack. The method includes forming a mask layer over the negative photoresist layer and the conductive layer. The mask layer has trenches over a second portion of the conductive layer. The method includes removing the second portion through the trenches. The method includes removing the mask layer. The method includes removing the negative photoresist layer.

公开(公告)号：US20200058661A1

公开(公告)日：2020-02-20

申请号：US16662941

申请日：2019-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Ching-Yen HSAIO ,  Cheng-Ming WU ,  Shih-Lu HSU ,  Chien-Hsian WANG

IPC: H01L27/11521 ,  H01L29/788 ,  H01L29/66 ,  H01L29/423 ,  H01L21/28 ,  H01L21/027 ,  H01L29/06 ,  H01L21/3213

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack and a conductive layer over a semiconductor substrate. The method includes forming a negative photoresist layer to cover the gate stack and a first portion of the conductive layer over the isolation structure and expose a second portion of the conductive layer. The method includes forming a mask layer over the negative photoresist layer and the conductive layer. The mask layer has trenches over the second portion of the conductive layer and an edge portion of the negative photoresist layer, and a thickness of the edge portion decreases in a direction away from the gate stack.

公开(公告)号：US20170053928A1

公开(公告)日：2017-02-23

申请号：US14832659

申请日：2015-08-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ching-Yen HSAIO ,  Cheng-Ming WU ,  Shih-Lu HSU ,  Chien-Hsian WANG

IPC: H01L27/115 ,  H01L23/535 ,  H01L21/28 ,  H01L21/027 ,  H01L27/02 ,  H01L29/06

CPC classification number: H01L27/11521 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/28008 ,  H01L21/28273 ,  H01L21/32139 ,  H01L29/0649 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack over the semiconductor substrate. The first gate stack includes a first gate and a second gate over the first gate, and the first gate and the second gate are electrically isolated from each other. The semiconductor device structure includes a ring structure surrounding the first gate stack. The ring structure is made of a conductive material.

Abstract translation: 提供半导体器件结构。 半导体器件结构包括半导体衬底。 半导体器件结构包括半导体衬底上的第一栅极堆叠。 第一栅极堆叠包括在第一栅极上的第一栅极和第二栅极，并且第一栅极和第二栅极彼此电隔离。 半导体器件结构包括围绕第一栅极堆叠的环形结构。 环结构由导电材料制成。