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公开(公告)号:US11362038B2
公开(公告)日:2022-06-14
申请号:US17062677
申请日:2020-10-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yeong-Jyh Lin , Ching I Li , De-Yang Chiou , Sz-Fan Chen , Han-Jui Hu , Ching-Hung Wang , Ru-Liang Lee , Chung-Yi Yu
IPC: H01L23/544 , H01L21/027 , H01L21/683 , G03F1/42 , G03F1/70 , H01L21/66
Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a plurality of upper alignment marks on a semiconductor wafer. A plurality of lower alignment marks is formed on a handle wafer and correspond to the upper alignment marks. The semiconductor wafer is bonded to the handle wafer such that centers of the upper alignment marks are laterally offset from centers of corresponding lower alignment marks. An overlay (OVL) shift is measured between the handle wafer and the semiconductor wafer by detecting the plurality of upper alignment marks and the plurality of lower alignment marks. A photolithography process is performed by a photolithography tool to partially form an integrated circuit (IC) structure over the semiconductor wafer. During the photolithography process the photolithography tool is compensatively aligned according to the OVL shift.
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公开(公告)号:US20210375781A1
公开(公告)日:2021-12-02
申请号:US17062677
申请日:2020-10-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yeong-Jyh Lin , Ching I Li , De-Yang Chiou , Sz-Fan Chen , Han-Jui Hu , Ching-Hung Wang , Ru-Liang Lee , Chung-Yi Yu
IPC: H01L23/544 , H01L21/027 , H01L21/683 , H01L21/66 , G03F1/42 , G03F1/70
Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a plurality of upper alignment marks on a semiconductor wafer. A plurality of lower alignment marks is formed on a handle wafer and correspond to the upper alignment marks. The semiconductor wafer is bonded to the handle wafer such that centers of the upper alignment marks are laterally offset from centers of corresponding lower alignment marks. An overlay (OVL) shift is measured between the handle wafer and the semiconductor wafer by detecting the plurality of upper alignment marks and the plurality of lower alignment marks. A photolithography process is performed by a photolithography tool to partially form an integrated circuit (IC) structure over the semiconductor wafer. During the photolithography process the photolithography tool is compensatively aligned according to the OVL shift.
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公开(公告)号:US20200227298A1
公开(公告)日:2020-07-16
申请号:US16829248
申请日:2020-03-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Ching-Hung Wang , Ping-Yin Liu , Yeong-Jyh Lin , Yeur-Luen Tu
IPC: H01L21/68 , G01B11/14 , H01L23/544 , H01L23/00
Abstract: Various embodiments of the present application are directed towards a method for workpiece-level alignment with low alignment error and high throughput. In some embodiments, the method comprises aligning a first alignment mark on a first workpiece to a field of view (FOV) of an imaging device based on feedback from the imaging device, and further aligning a second alignment mark on a second workpiece to the first alignment mark based on feedback from the imaging device. The second workpiece is outside the FOV during the aligning of the first alignment mark. The aligning of the second alignment mark is performed without moving the first alignment mark out of the FOV. Further, the imaging device views the second alignment mark, and further views the first alignment mark through the second workpiece, during the aligning of the second alignment mark. The imaging device may, for example, perform imaging with reflected infrared radiation.
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公开(公告)号:US20190393067A1
公开(公告)日:2019-12-26
申请号:US16015507
申请日:2018-06-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Ching-Hung Wang , Ping-Yin Liu , Yeong-Jyh Lin , Yeur-Luen Tu
IPC: H01L21/68 , G01B11/14 , H01L23/544 , H01L23/00
Abstract: Various embodiments of the present application are directed towards a method for workpiece-level alignment with low alignment error and high throughput. In some embodiments, the method comprises aligning a first alignment mark on a first workpiece to a field of view (FOV) of an imaging device based on feedback from the imaging device, and further aligning a second alignment mark on a second workpiece to the first alignment mark based on feedback from the imaging device. The second workpiece is outside the FOV during the aligning of the first alignment mark. The aligning of the second alignment mark is performed without moving the first alignment mark out of the FOV. Further, the imaging device views the second alignment mark, and further views the first alignment mark through the second workpiece, during the aligning of the second alignment mark. The imaging device may, for example, perform imaging with reflected infrared radiation.
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公开(公告)号:US11189515B2
公开(公告)日:2021-11-30
申请号:US16829248
申请日:2020-03-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Ching-Hung Wang , Ping-Yin Liu , Yeong-Jyh Lin , Yeur-Luen Tu
IPC: H01L21/68 , G01B11/14 , H01L23/544 , H01L23/00
Abstract: Various embodiments of the present application are directed towards a method for workpiece-level alignment with low alignment error and high throughput. In some embodiments, the method comprises aligning a first alignment mark on a first workpiece to a field of view (FOV) of an imaging device based on feedback from the imaging device, and further aligning a second alignment mark on a second workpiece to the first alignment mark based on feedback from the imaging device. The second workpiece is outside the FOV during the aligning of the first alignment mark. The aligning of the second alignment mark is performed without moving the first alignment mark out of the FOV. Further, the imaging device views the second alignment mark, and further views the first alignment mark through the second workpiece, during the aligning of the second alignment mark. The imaging device may, for example, perform imaging with reflected infrared radiation.
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