公开(公告)号：US20250087533A1

公开(公告)日：2025-03-13

申请号：US18619626

申请日：2024-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hsing Tsai ,  Ya-Lien Lee ,  Chih-Han Tseng ,  Kuei-Wen Huang ,  Kuan-Hung Ho ,  Ming-Uei Hung ,  Chih-Cheng Kuo ,  Yi-An Lai ,  Wei-Ting Chen

IPC: H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/66 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes: forming a via in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; forming an opening in the second dielectric layer, where the opening exposes an upper surface of the via; selectively forming a capping layer over the upper surface of the via, where the capping layer has a curved upper surface that extends above a first upper surface of the first dielectric layer distal from the substrate; after forming the capping layer, forming a barrier layer in the opening over the capping layer and along sidewalls of the second dielectric layer exposed by the opening; and filling the opening by forming an electrically conductive material over the barrier layer.

公开(公告)号：US20240274555A1

公开(公告)日：2024-08-15

申请号：US18313746

申请日：2023-05-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Jen Lo ,  Syun-Ming Jang ,  Ming-Hsing Tsai ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Ya-Lien Lee ,  Chih-Han Tseng ,  Chih-Cheng Kuo ,  Yi-An Lai ,  Kevin Huang ,  Kuan-Hung Ho

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L2224/0239 ,  H01L2224/0384 ,  H01L2224/05073 ,  H01L2224/05184 ,  H01L2224/05582

Abstract: Embodiments provide a method and resulting structure that includes forming an opening in a dielectric layer to expose a metal feature, selectively depositing a metal cap on the metal feature, depositing a barrier layer over the metal cap, and depositing a conductive fill on the barrier layer.