公开(公告)号：US12163995B2

公开(公告)日：2024-12-10

申请号：US18196380

申请日：2023-05-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ann Lai ,  Ruo-Rung Huang ,  Kun-Lung Chen ,  Chun-Yi Yang ,  Chan-Hong Chern

IPC: G01R31/26 ,  G01R31/27 ,  H03K3/017 ,  H03K17/687

Abstract: An apparatus and method for testing gallium nitride field effect transistors (GaN FETs) are disclosed herein. In some embodiments, the apparatus includes: a high side GaN FET, a low side GaN FET, a high side driver coupled to a gate of the high side GaN FET, a low side driver coupled to a gate of the low side GaN FET, and a driver circuit coupled to the high side and low side drivers and configured to generate drive signals capable of driving the high and low side GaN FETs, wherein the high and low side GaN FETs and transistors, within the high and low side drivers and the driver circuit, are patterned on a same semiconductor device layer during a front-end-of-line (FEOL) process.

公开(公告)号：US10523183B2

公开(公告)日：2019-12-31

申请号：US16140982

申请日：2018-09-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chan-Hong Chern ,  Kun-Lung Chen

IPC: H03K3/011 ,  H03K3/356

Abstract: Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.

公开(公告)号：US11680978B2

公开(公告)日：2023-06-20

申请号：US17039627

申请日：2020-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Ann Lai ,  Ruo-Rung Huang ,  Kun-Lung Chen ,  Chun-Yi Yang ,  Chan-Hong Chern

IPC: G01R31/26 ,  H03K17/687 ,  G01R31/27 ,  H03K3/017

CPC classification number: G01R31/2621 ,  G01R31/27 ,  H03K3/017 ,  H03K17/6871 ,  H03K2217/0063 ,  H03K2217/0072

Abstract: An apparatus and method for testing gallium nitride field effect transistors (GaN FETs) are disclosed herein. In some embodiments, the apparatus includes: a high side GaN FET, a low side GaN FET, a high side driver coupled to a gate of the high side GaN FET, a low side driver coupled to a gate of the low side GaN FET, and a driver circuit coupled to the high side and low side drivers and configured to generate drive signals capable of driving the high and low side GaN FETs, wherein the high and low side GaN FETs and transistors, within the high and low side drivers and the driver circuit, are patterned on a same semiconductor device layer during a front-end-of-line (FEOL) process.

公开(公告)号：US20210226611A1

公开(公告)日：2021-07-22

申请号：US17221893

申请日：2021-04-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chan-Hong Chern ,  Kun-Lung Chen

IPC: H03K3/011 ,  H03K3/356

Abstract: Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.

公开(公告)号：US11522526B2

公开(公告)日：2022-12-06

申请号：US17221893

申请日：2021-04-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chan-Hong Chern ,  Kun-Lung Chen

IPC: H03K3/011 ,  H03K3/356

Abstract: Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.

公开(公告)号：US11005453B2

公开(公告)日：2021-05-11

申请号：US16693596

申请日：2019-11-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chan-Hong Chern ,  Kun-Lung Chen

IPC: H03K3/011 ,  H03K3/356

Abstract: Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.

公开(公告)号：US20210109059A1

公开(公告)日：2021-04-15

申请号：US17107420

申请日：2020-11-30

Applicant: Taiwan Semiconductor manufacturing Co., Ltd.

Inventor： Tung-Tsun CHEN ,  Jui-Cheng Huang ,  Kun-Lung Chen ,  Cheng-Hsiang Hsieh

IPC: G01N27/414 ,  H01L27/12

Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.

公开(公告)号：US10852271B2

公开(公告)日：2020-12-01

申请号：US15378794

申请日：2016-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Tsun Chen ,  Jui-Cheng Huang ,  Kun-Lung Chen ,  Cheng-Hsiang Hsieh

IPC: G01N27/414 ,  H01L27/12

Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.

公开(公告)号：US20200091895A1

公开(公告)日：2020-03-19

申请号：US16693596

申请日：2019-11-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chan-Hong Chern ,  Kun-Lung Chen

IPC: H03K3/011 ,  H03K3/356

Abstract: Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.

公开(公告)号：US20190238119A1

公开(公告)日：2019-08-01

申请号：US16140982

申请日：2018-09-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chan-Hong Chern ,  Kun-Lung Chen

IPC: H03K3/011 ,  H03K3/356

Abstract: Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.